Process for manufacturing a semiconductor wafer integrating electronic devices and a structure for electromagnetic decoupling

An integrated device comprising:

• a substrate of a semiconductor wafer;
• an insulating structure surrounded by said substrate and exposed on opposite faces of said wafer;
• an inductor carried by said insulating structure;
• and
• a first through conductive via and a second through conductive via, crossing said insulating structure in a direction orthogonal to said faces of said wafer and electrically connected to said inductor.

An isolation structure comprising:

• a semiconductor wafer having first and second surfaces, and a first conductive region;
• an isolation region enclosed by the first conductive region of the semiconductor wafer and being exposed at the first and second surfaces of the semiconductor wafer;
• and
• a second conductive region enclosed by the isolation region, and being exposed at the first and second surfaces of the semiconductor wafer.

A method of forming an isolation structure, comprising:

• forming a plurality of trenches in a first conductive region of a semiconductor wafer to isolate a second conductive region;
• forming an isolation region positioned within the plurality of trenches;
• and
• removing a portion of the semiconductor wafer such that the first and second conductive regions and isolation region extend completely through a remaining portion of the semiconductor wafer.