Method for manufacturing and structure of semiconductor assembly with a shallow trench device region

Abstract

A method for manufacturing a semiconductor assembly includes forming an active region of a semiconductor substrate and removing at least part of the active region to form a shallow trench opening. The method also includes forming a dielectric layer proximate the active region at least partially within the shallow trench opening and removing at least part of the dielectric layer to form a first device region. The method may include forming a first semiconductor device at the first device region. The first semiconductor device may be operable to facilitate the flow of electric current through the assembly The method may also include forming a second semiconductor device at a second device region, wherein a depth of an area of the active region below the second device region is greater than a depth of an area of the active region below the first device region.

Dependencies are inferred from the claim text.