Method of isolating semiconductor laser diode

Abstract

A method of isolating semiconductor laser diodes is provided. A n-type compound semiconductor layer is formed on a substrate. A plurality of semiconductor laser diodes having the n-type compound semiconductor layer are formed on the n-type compound semiconductor layer so that laser emitting regions of the semiconductor laser diodes are connected to each other. The n-type compound semiconductor layer and a material layer of which the semiconductor laser diodes are formed are removed around the semiconductor laser diodes and the laser emitting regions for connecting the semiconductor laser diodes to each other. Base cut lines that perpendicularly cross the laser emitting regions are formed on backside of the substrate between the semiconductor laser diodes. The semiconductor laser diodes are isolated from each other along the respective base cut lines. Thus, laser emitting faces perpendicular to an active layer and having clear surfaces can be obtained. Also, failure can be minimized in a process of isolating semiconductor laser diodes.

Dependencies are inferred from the claim text.