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US 2003/0113975 A1Published application
Methods for use in forming a capacitor and structures resulting from same
AssigneeMicron Technologies, Inc.
InventorsGurtej S. Sandhu, Garo Derderian
Life of this patent
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Abstract
A method for use with the formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.
Claims76
A method for use with the formation of a capacitor, the method comprising:
- providing a capacitor structure including:
- forming a first electrode on a portion of a substrate assembly,
- forming a high dielectric material over at least a portion of the first electrode, and
- forming a second electrode over the high dielectric material;
- and
- forming a layer over at least a portion of the second electrode, wherein at least one of the portion of the substrate assembly and the layer formed over the second electrode is formed of an excess oxygen containing material.
3 more elements
A method for use with the formation of a capacitor, the method comprising:
- providing a first electrode;
- providing a high dielectric material over at least a portion of the first electrode;
- providing a second electrode over the high dielectric material;
- and
- forming an ozone enhanced oxide layer over at least a portion of the second electrode.
2 more elements
A method for use with the formation of a capacitor, the method comprising:
- providing a substrate assembly having a region formed of an ozone enhanced oxide material;
- forming a first electrode over at least a portion of the region of ozone enhanced oxide material;
- forming a high dielectric material over at least a portion of the first electrode;
- and
- forming a second electrode over the high dielectric material.
2 more elements
A method for use in forming a memory cell having a capacitor, the method comprising the steps of:
- providing a capacitor having a first electrode, a second electrode, and a high dielectric material between the first and second electrode, wherein the capacitor is sandwiched between two regions, at least a portion of at least one of the two regions is formed of an ozone enhanced oxide material;
- and
- forming one or more post capacitor formation layers during one or more thermal cycles relative to the capacitor, wherein an oxygen concentration of the high dielectric material is substantially maintained during formation of the one or more post capacitor formation layers.
A capacitor structure, comprising:
- a first electrode formed on at least a portion of a substrate assembly;
- a dielectric material on at least a portion of the first electrode;
- a second electrode on the dielectric material;
- and
- a layer formed over at least a portion of the second electrode, wherein at least one of the portion of the substrate assembly and the layer formed over the second electrode is formed of an excess oxygen containing material.
2 more elements
A substrate assembly structure, comprising:
- at least a first material;
- at least a first conductive material formed on at least a portion of the first material;
- a dielectric material provided over at least a portion of the first conductive material;
- at least a second conductive material formed on at least a portion of the dielectric material;
- and
- a second material formed over at least a portion of the second conductive material, wherein at least the portion of the first material is formed of an excess oxygen containing material.
3 more elements
A substrate assembly structure, comprising:
- at least a first material;
- at least a first conductive material formed on at least a portion of the first material;
- a dielectric material provided over at least a portion of the first conductive material;
- at least a second conductive material formed on at least a portion of the dielectric material;
- and
- a second material formed over at least a portion of the second conductive material, wherein at least one of the portion of the first material and the second material is formed of an excess oxygen containing material, wherein the excess oxygen containing material includes a doped ozone enhanced oxide material.
3 more elements
A substrate assembly structure, comprising:
- at least a first material;
- at least a first conductive material formed on at least a portion of the first material;
- a dielectric material provided over at least a portion of the first conductive material;
- at least a second conductive material formed on at least a portion of the dielectric material;
- and
- a second material formed over at least a portion of the second conductive material, wherein at least one of the portion of the first material and the second material is formed of an excess oxygen containing material, wherein the excess oxygen containing material includes a doped ozone enhanced tetraethylorthosilicate material.
3 more elements
A substrate assembly structure, comprising:
- at least a first material;
- at least a first conductive material formed on at least a portion of the first material;
- a dielectric material provided over at least a portion of the first conductive material;
- at least a second conductive material formed on at least a portion of the dielectric material;
- and
- a second material formed over at least a portion of the second conductive material, wherein at least one of the portion of the first material and the second material is formed of an excess oxygen containing material, wherein the excess oxygen containing material includes an oxygen concentration of about 66.67 percent to about 76.6 percent.
3 more elements
A method for use in forming a substrate assembly structure, the method comprising:
- providing a first conductive material, a second conductive material, and a dielectric material between at least portions of the first and second conductive material, wherein the dielectric material has an oxygen concentration, wherein at least one portion of the first and second conductive material is sandwiched between two regions, at least a portion of at least one of the two regions is formed of excess oxygen containing material, and further wherein the excess oxygen containing material includes an oxygen concentration of about 66.67 percent to about 76.6 percent;
- and
- forming one or more additional layers relative to the first conductive material, second conductive material, and dielectric material using one or more thermal processes, wherein the oxygen concentration of the dielectric material is substantially maintained during the one or more thermal processes.
Dependencies are inferred from the claim text.