US 2003/0113972 A1Published application

Semiconductor device manufacturing method

AssigneeMatsushita Electric Industrial Co., Ltd.

InventorsShigenori Hayashi, Kazuhiko Yamamoto

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Abstract

The present invention provides a method of depositing a metal film on a substrate in a non-oxidizing atmosphere and then forming a metal oxide film by oxidizing the metal film in an oxidizing atmosphere.

Claims21

Dependent claims

A semiconductor device manufacturing method comprising:

a first step of depositing a metal film on a substrate in a non-oxidizing atmosphere;
and
a second step of forming a metal oxide film by oxidizing the metal film in an oxidizing atmosphere.

Dependencies are inferred from the claim text.

Facts

Application: 10/319,654Filed 16 Dec 2002
Priority: JP 2001-38434418 Dec 2001
Published: 19 Jun 2003
Term ends: Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10P 14/6314
Formation by oxidation, e.g. oxidation of the substrate: of a metallic layer
H10D 64/0134
On single crystalline silicon, e.g. chemical oxidation using a liquid: with a treatment, e.g. annealing, after the formation of the insulator and…
H10D 64/01342
On single crystalline silicon, e.g. chemical oxidation using a liquid: by deposition, e.g. evaporation, ALD or laser deposition
H10D 64/01344
On single crystalline silicon, e.g. chemical oxidation using a liquid: in a nitrogen-containing ambient, e.g. N2O oxidation

Family

US 7,115,533 B2Related patent
US 2003/0113972 A1This patent

From the US filing history. Foreign family members aren’t listed.

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