Methods to form electronic devices and methods to form a material over a semiconductive substrate

A method of forming an electronic device comprising:

• providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
• forming a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode by low pressure chemical vapor deposition using feed gases comprising a silicon hydride, H2 and ammonia;
• exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing;
• and
• forming a second electrode over the silicon dioxide layer and the first electrode.

A method of forming an electronic device comprising:

• providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
• low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode using feed gases comprising a silicon hydride and ammonia within a reactor, the depositing comprising increasing internal reactor temperature from below 500° C. to a maximum deposition temperature above 600° C. and starting feed of the silicon hydride into the reactor at a temperature less than or equal to 600° C.;
• exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing;
• and
• forming a second electrode over the silicon dioxide layer and the first electrode.

A method of forming an electronic device comprising:

• providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
• low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode using feed gases comprising a silicon hydride and ammonia within a reactor, the depositing comprising increasing internal reactor temperature from below 500° C. to a maximum deposition temperature above 600° C. using a temperature ramp rate of greater than 10° C./minute from at least 500° C. to at least 600° C.;
• exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing;
• and
• forming a second electrode over the silicon dioxide layer and the first electrode.

A method of forming an electronic device comprising:

• providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
• low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode while the substrate is rotating using feed gases comprising a silicon hydride and ammonia within a reactor, the depositing comprising increasing internal reactor temperature from below 500° C. to a maximum deposition temperature above 600° C. and starting the substrate to rotate prior to reaching the maximum deposition temperature;
• exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing;
• and
• forming a second electrode over the silicon dioxide layer and the first electrode.

A method of forming an electronic device comprising:

• providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
• low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode while the substrate is rotating using feed gases comprising a silicon hydride and ammonia within a reactor, the depositing comprising increasing internal reactor temperature from below 500° C. to a maximum deposition temperature of at least 640° C. and starting the substrate to rotate prior to reaching 640° C.;
• exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing;
• and
• forming a second electrode over the silicon dioxide layer and the first electrode.

A method of forming an electronic device comprising:

• providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
• low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode using feed gases comprising a silicon hydride and ammonia within a reactor while the substrate is rotating;
• reducing rotation rate of the substrate upon substantially ceasing flow of at least one of the silicon hydride and ammonia to the reactor;
• exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing;
• and
• forming a second electrode over the silicon dioxide layer and the first electrode.

A method of forming an electronic device comprising:

• providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
• low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode using feed gases comprising a silicon hydride and ammonia within a reactor while the substrate is rotating;
• reducing rotation rate of the substrate within 2 minutes of substantially ceasing flow of at least one of the silicon hydride and ammonia to the reactor;
• exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing;
• and
• forming a second electrode over the silicon dioxide layer and the first electrode.

A method of forming an electronic device comprising:

• providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
• low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first. electrode to a thickness of no greater than 80 Angstroms over at least the first electrode using feed gases comprising a silicon hydride and ammonia within a reactor;
• after the depositing, flowing an inert cooling gas through the reactor to cool the substrate and deposited material;
• after the cooling, exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing;
• and
• forming a second electrode over the silicon dioxide layer and the first electrode.

A method of forming an electronic device comprising:

• providing a doped oxide layer over a substrate;
• chemical-mechanical polishing the doped oxide layer;
• and
• after the chemical-mechanical polishing, flowing the doped oxide layer in a process comprising at least two steps, a prior in time of the steps comprising an inert atmosphere at a temperature of at least about 700° C., a later in time of the steps comprising an ammonia comprising atmosphere at a temperature of at least about 700° C. and forming a silicon nitride layer over the doped oxide layer.

A method of forming an electronic device comprising:

• providing a doped oxide layer over a substrate;
• forming an opening into the doped oxide layer;
• depositing conductive material to less than completely fill the opening and form over the doped oxide layer proximate the opening;
• removing the conductive material formed over the doped oxide layer proximate the opening to isolate the conductive material within the opening;
• after the removing, flowing the doped oxide layer in a process comprising at least two steps, a prior in time of the steps comprising an inert atmosphere at a temperature of at least about 700° C., a later in time of the steps comprising an ammonia comprising atmosphere at a temperature of at least about 700° C. and forming a silicon nitride layer at least over the doped oxide layer;
• exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700° C. to form a silicon dioxide layer over the silicon nitride layer and the conductive material, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing;
• and
• forming a conductive electrode over the silicon dioxide layer and the conductive material.