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US 2003/0113964 A1Published application
Method for forming a storage node
OwnerSang-tae Choi, Il-hyung Kiminventors
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Abstract
A method for forming a storage node using photoresist is described. The method can form a storage node pattern in a rectangular shape which allows for deep etching because it has a smaller slope than a conventional elliptical pattern by employing a double exposure method which firstly forms a portion corresponding to the major axis of the storage node using a negative photoresist and secondly forms a portion corresponding to the minor axis of the storage node using a positive photoresist.
Claims5
A method for forming a storage node using photoresist comprises:
- preparing a semiconductor substrate with a substructure;
- forming a first photoresist on the semiconductor substrate;
- forming a first photoresist pattern by patterning the first photoresist to form the major axis of the storage node;
- forming a second photoresist on the first photoresist pattern;
- forming a second photoresist pattern by patterning the second photoresist to form the minor axis of the storage node;
- and
- forming the storage node in a shape of rectangle by a double exposure method using the first and second photoresist patterns.
4 more elements
Dependencies are inferred from the claim text.