Non-volatile memory device with improved data retention and method therefor

A non-volatile memory cell comprising:

• a semiconductor substrate;
• a tunnel oxide formed over the semiconductor substrate;
• a floating gate formed over the tunnel oxide comprising a plurality of charge, a depletion region and an accumulation region, wherein the accumulation region stores a greater concentration of charge than the depletion region;
• an insulating layer formed on the floating gate, wherein the insulating layer is in physical contact with the accumulation region;
• and
• a control gate formed over the insulating layer.

A semiconductor device comprising:

• a substrate;
• a first insulating layer over the substrate;
• a second insulating layer over the substrate;
• a conductive layer formed over the second insulating layer;
• and
• a charge storage layer between the first insulating layer and the second insulating layer comprising:
• a first charge storage layer consisting of silicon;
• and
• a second charge storage layer over the first charge storage layer consisting of silicon and germanium, wherein the second charge storage layer and the second insulating layer form an interface.

A method of forming a semiconductor device comprising:

• providing a semiconductor device;
• forming a first insulating layer over the semiconductor device;
• forming a charge storage layer over the first insulating layer, wherein the charge storage layer stores a plurality of charge;
• forming a second insulating layer on the charge storage layer, wherein the charge storage layer and the second insulating layer form an interface and at least a majority of the charge is stored substantially at the interface;
• and
• forming a conductive layer over the second insulating layer.