Pattern formation material and pattern formation method

A pattern formation material comprising:

• a polymer including a first unit represented by Chemical Formula 3, a second unit represented by Chemical Formula 4 and a third unit represented by Chemical Formula 5;
• and
• an acid generator:
• Chemical Formula 3:
• 27
• Chemical Formula 4:
• 28
• Chemical Formula 5:
• 29
• wherein R1, R2 and R4 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom;
• R3 is a protecting group released by an acid;
• and m is an integer of 0 through 5.

A pattern formation material comprising:

• a polymer including a first unit represented by Chemical Formula 6 and a second unit represented by Chemical Formula 7;
• and
• an acid generator:
• Chemical Formula 6:
• 30
• Chemical Formula 7:
• 31
• wherein R2 and R5 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom;
• R3 and R6 are the same or different, at least one of which is a protecting group released by an acid;
• and n is an integer of 0 through 5.

A pattern formation material comprising:

• a polymer including a first unit represented by Chemical Formula 8 and a second unit represented by Chemical Formula 9;
• and
• an acid generator:
• Chemical Formula 8:
• 32
• Chemical Formula 9:
• 33
• wherein R4 and R5 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom;
• R6 is a protecting group released by an acid;
• and n is an integer of 0 through 5.

A pattern formation material comprising:

• a polymer including a first unit represented by Chemical Formula 10, a second unit represented by Chemical Formula 11 and a third unit represented by Chemical Formula 12;
• and
• an acid generator:
• Chemical Formula 10:
• 34
• Chemical Formula 11:
• 35
• Chemical Formula 12:
• 36
• wherein R2, R4 and R5 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom;
• R3 and R6 are the same or different, at least one of which is a protecting group released by an acid;
• and n is an integer of 0 through 5.

A pattern formation method comprising the steps of:

• forming a resist film by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator:
• Chemical Formula 1:
• 37
• Chemical Formula 2:
• 38
• wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom;
• R3 is a protecting group released by an acid;
• and m is an integer of 0 through 5;
• irradiating said resist film with exposing light of a wavelength shorter than a 180 nm band for pattern exposure;
• and
• forming a resist pattern by developing said resist film after the pattern exposure.

A pattern formation method comprising the steps of:

• forming a resist film by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 3, a second unit represented by Chemical Formula 4 and a third unit represented by Chemical Formula 5, and an acid generator:
• Chemical Formula 3:
• 39
• Chemical Formula 4:
• 40
• Chemical Formula 5:
• 41
• wherein R1, R2 and R4 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom;
• R3 is a protecting group released by an acid;
• and m is an integer of 0 through 5;
• irradiating said resist film with exposing light of a wavelength shorter than a 180 nm band for pattern exposure;
• and
• forming a resist pattern by developing said resist film after the pattern exposure.

A pattern formation method comprising the steps of:

• forming a resist film by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 6 and a second unit represented by Chemical Formula 7, and an acid generator:
• Chemical Formula 6:
• 42
• Chemical Formula 7:
• 43
• wherein R2 and R5 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom;
• R3 and R6 are the same or different, at least one of which is a protecting group released by an acid;
• and n is an integer of 0 through 5;
• irradiating said resist film with exposing light of a wavelength shorter than a 180 nm band for pattern exposure;
• and
• forming a resist pattern by developing said resist film after the pattern exposure.

A pattern formation method comprising the steps of:

• forming a resist film by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 8 and a second unit represented by Chemical Formula 9, and an acid generator:
• Chemical Formula 8:
• 44
• Chemical Formula 9:
• 45
• wherein R4 and R5 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom;
• R6 is a protecting group released by an acid;
• and n is an integer of 0 through 5;
• irradiating said resist film with exposing light of a wavelength shorter than a 180 nm band for pattern exposure;
• and
• forming a resist pattern by developing said resist film after the pattern exposure.

A pattern formation method comprising the steps of:

• forming a resist film by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 10, a second unit represented by Chemical Formula 11 and a third unit represented by Chemical Formula 12, and an acid generator:
• Chemical Formula 10:
• 46
• Chemical Formula 11:
• 47
• Chemical Formula 12:
• 48
• wherein R2, R4 and R5 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom;
• R3 and R6 are the same or different, at least one of which is a protecting group released by an acid;
• and n is an integer of 0 through 5;
• irradiating said resist film with exposing light of a wavelength shorter than a 180 nm band for pattern exposure;
• and
• forming a resist pattern by developing said resist film after the pattern exposure.