Heat-dissipating substrate, method for making the same, and semiconductor device including the same
AssigneeSumitomo Electric Industries, Ltd.
InventorsMasahiro Omachi, Akira Fukui
Life of this patent
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Abstract
A heat-dissipating substrate is made of a composite material comprising a first composition primarily composed of aluminum and a second composition primarily composed of silicon carbide and/or silicon The heat-dissipating substrate has a recess in one of its main faces. The main faces have fine unevenness, and the maximum amplitude of the fine unevenness in the depth direction of a main face is smaller than the maximum length in the depth direction of composite particles comprising the first composition and the second composition or particles of the second composition, the particles being exposed at the surface of the main face.
Claims20
A heat-dissipating substrate made of a composite material comprising:
- a first composition primarily composed of aluminum;
- and
- a second composition primarily composed of silicon carbide and/or silicon,
- wherein the heat-dissipating substrate has a recess in one of its main faces, and the maximum amplitude in the depth direction of fine unevenness excluding the recess in the surface of a main face is smaller than the maximum length in the depth direction of composite particles comprising the first composition and the second composition or particles of the second composition, the composite particles and the particles being exposed at the surface of the main face.
A method for making a heat-dissipating substrate, comprising:
- a step of preparing a composite material comprising a first composition primarily composed of aluminum and a second composition primarily composed of silicon carbide and/or silicon;
- a first etching step of forming a recess in a main face of the composite material by chemical etching;
- and
- a second etching step of forming fine unevenness except for the recess on main faces by chemical etching, such that the maximum amplitude of the fine unevenness in the depth direction of a main face is smaller than the maximum length in the depth direction of the composite particles comprising the first composition and the second component or the particles of the second composition, the composite particles and the particles being exposed at the surface of the main face.
Dependencies are inferred from the claim text.