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US 2003/0113576 A1Published application
Electroless plating bath composition and method of using
AssigneeIntel Corporation
InventorsRamanan V. Chebiam, Valery M. Dubin
Life of this patent
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Abstract
The present invention relates to a cobalt electroless plating bath composition and method of using it for microelectronic device fabrication. In one embodiment, the present invention relates to cobalt electroless plating in the fabrication of interconnect structures in semiconductor devices.
Claims30
An electroless plating solution comprising:
- a primary metal selected from cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, and combinations thereof;
- at least one primary reducing agent;
- a complexing and buffering agent consisting essentially of a single agent;
- at least one pH adjusting agent;
- optionally at least one surface active agent;
- and
- the solution, reaction, and mixture products thereof.
4 more elements
An electroless plating structure on a metal-six copper (M6 Cu) pad, having a composition comprising:
- pMwsMxByPz
- wherein pM is a primary metal selected from at least one of Cu, Ag, Au, Co, Pd, Pt, Ni, Rh, and Ir;
- wherein sM is a secondary metal selected from zero to at least one of Cr, Mo, W, Mn, Tc, and Re;
- wherein B and P represent boron and phosphorus, respectively;
- and
- wherein w has a range from about 0.5 to about 0.99, x has a range from about 0.0 to about 0.2, y has a range from about 0.01 to about 0.1, and z has a range from about 0.0 to about 0.02.
3 more elements
A process comprising:
- combining a primary metal and ammonium sulphate in a first solution;
- mixing tetramethylammonium hydroxide to the first solution to form a second solution;
- first adjusting the pH and the temperature of the second solution;
- mixing dimethylamine borane and ammonium hypophosphite to the second solution to form a third solution;
- second adjusting the pH and the temperature of the third solution;
- and
- applying the third solution to a substrate under conditions to cause the cobalt in the cobalt chloride to precipitate onto the substrate.
4 more elements
A process comprising:
- in solution, combining cobalt chloride, ammonium sulphate, tetramethylammonium hydroxide, dimethylamine borane, and ammonium hypophosphite;
- adjusting the pH to a range from about pH 7 to about pH 10;
- adjusting the temperature to a range from about 20° C. to about 60° C.;
- and
- applying the solution to a substrate under conditions to cause the cobalt in the cobalt chloride to deposit onto the substrate.
2 more elements
An article comprising:
- a conductive substrate;
- a first lamella disposed above the conductive substrate including a composition according to the formula pMwsMxBy
- wherein pM represents from one to nine primary metals, selected from Cu, Ag, Au, Ni, Pd, Pt, Co, Rh, and Ir, wherein sM represents from zero to six secondary metals, selected from Cr, Mo, W, Mn, Tc, and Re, and wherein By represents boron;
- and
- wherein w has a range from about 0.5 to about 0.99, x has a range from about 0.0 to about 0.2, and y has a range from about 0.01 to about 0.1.
2 more elements
Dependencies are inferred from the claim text.