Method for forming high dielectric layers using atomic layer deposition

A method for forming a high dielectric layer having a first metal element, a titanium element and an oxygen element, the method comprising:

• preparing a substrate having a predetermined lower structure;
• performing a reaction process for a first organic source being absorbed to the substrate, wherein the first organic source comprises the first metal element to which a ligand combined, and wherein the ligand comprises a C—H bond;
• forming an atomic layer of the first metal element and the oxygen element by inducing reduction and oxidation between the first organic source and a plasma produced by H2 gas and H2 gas;
• performing a reaction process for a second organic source being absorbed to the atomic layer, wherein the second organic source comprises the titanium element to which a ligand combined, and wherein the ligand includes an oxygen;
• and
• forming an atomic layer of the titanium element and the oxygen element by inducing reduction and oxidation between the second organic source and a plasma produced by H2 gas and H2 gas.

A method for forming a high dielectric layer having a first metal element, a titanium element and an oxygen element, the method comprising the steps of:

• preparing a substrate having a predetermined lower structure;
• performing a reaction process for a first organic source being absorbed to the substrate, wherein the first organic source comprises the first metal element to which a ligand combined, and wherein the ligand comprises a C—H bond;
• forming an atomic layer of the first metal element and the oxygen element by inducing combustion between the first organic source and an oxygen atom;
• performing a reaction process for a second organic source being absorbed to the atomic layer, wherein the second organic source comprises the titanium element to which an alkoxide ligand combined;
• and
• forming an atomic layer of the titanium element and the oxygen element by inducing combustion between the first organic source and an oxygen atom.

The method of claim 24, further comprising the steps of:

• performing a reaction process for a third organic source being absorbed to the substrate on which the atomic layer of the titanium element and the oxygen element are formed, wherein the third organic source comprises a second metal element to which a ligand combined, and wherein the ligand comprises a C—H bond and an oxygen;
• forming an atomic layer of the second metal element and the oxygen element by inducing combustion between the third organic source and an oxygen atom;
• performing a reaction process for a second organic source being absorbed to the substrate on which the atomic layer of the titanium metal element and the oxygen element is formed;
• and
• forming an atomic layer of the titanium element and the oxygen element by inducing combustion between the third organic source and an oxygen atom.