System and method for preferential chemical vapor deposition
OwnerBruce Edwin Mayer, Nitin Krishnarao Ingle +3inventors
InventorsBruce Edwin Mayer, Nitin Krishnarao Ingle, Robert Shawn Murphy, Colby Daniel Mattson, Samuel Shioji Kurita
Life of this patent
Estimating the term…
Abstract
A method and system for chemical vapor deposition in which preferentially depositing chemical species are formed by extending the residence time of reactant gases in the reaction region. These preferentially depositing species deposit more rapidly on the sides and bottoms of trenches on semiconductor wafers and/or other CVD substrate4s and thus promote the generation of more uniform films that eliminate expensive post-processing steps such as reverse active masking.
Claims24
A chemical vapor deposition system for depositing a film on a substrate surface having at least an area of a first material and at least an area of a second material, comprising:
- an injector, said injector providing one or more gases to a reaction region, said one or more gases having a residence time in said reaction region sufficient to promote formation of one or more target chemical species by reaction of said one or more gases, said one or more target chemical species depositing on said first material at a faster rate than on said second material.
The chemical vapor deposition system of claim 4 further comprising a conveyor mechanism for translating said substrate support at a lateral velocity through said reaction region at least once such that said substrate surface is exposed to said one or more target chemical species for a desired period.
A chemical vapor deposition system for depositing a film on a substrate surface having at least an area of a first material and at least an area of a second material, comprising:
- at least a first injector, said first injector providing one or more gases;
- a first reaction region adjacent said first injector that receives said one or more gases;
- at least a first exhaust passageway, said first exhaust passageway removing gases from said first reaction region at a rate that provides a residence time for gases in said first reaction region that is sufficient to promote formation of one or more target chemical species from said one or more gases, said one or more target chemical species depositing on said first material at a faster rate than on said second material;
- and
- a translation mechanism that moves said substrate through said reaction region at a lateral velocity to expose said substrate surface to said one or more target chemical species for a desired period.
A method of depositing a film on a substrate surface having at least an area of a first material and an area of a second material, comprising the steps of:
- delivering one or more gases at a first flow rate to a reaction region, said reaction region having a volume;
- allowing said one or more reactant gases to react to form a gas mixture of one or more target chemical species and one or more waste gases;
- exhausting said gas mixture from said reaction region at an exhaust flow rate;
- controlling the ratio of said exhaust and said first flow rates relative to said reaction region volume such that the residence time of said one or more gases in said reaction region is sufficient to promote formation of one or more target chemical species from said one or more gases, said one or more target chemical species depositing at a faster rate on said first material than on said second material;
- and
- translating said substrate at least once through said reaction region to expose said surface to said one or more target chemical species.
Dependencies are inferred from the claim text.