Method of forming floating structure of substrate and method of manufacturing floating structure gate electrode and field emission device employing the floating structure

A method of forming a floating structure lifting up from a substrate, the method comprising:

• forming a catalytic layer on the substrate;
• forming an amorphous material on the catalytic layer, the amorphous material having an opening portion that partially exposes the catalytic layer;
• supplying a reactant gas comprising hydrogen gas and carbon oxide gas through the opening portion so that amorphous carbon can be generated and accumulated between the amorphous material and the catalytic layer around the opening portion to form a predetermined carbon layer and force the amorphous material to lift up from the substrate;
• and
• removing the carbon layer through the opening portion so that the amorphous material around the opening portion is partially separated from and floats over the substrate.

A method of manufacturing a gate electrode having a floating structure lifting up from a substrate in a field emission device, the method comprising:

• forming a cathode on the substrate;
• forming a catalytic metal layer on the top of the cathode;
• forming an amorphous material layer having a predetermined thickness on a resultant stack;
• forming a gate electrode on the top of the amorphous material layer;
• vertically forming a hole in a resultant stack to partially expose the surface of one of the catalytic metal layer and the cathode;
• supplying a reactant gas comprising hydrogen gas and carbon oxide gas through the hole so that a carbon layer is grown between the amorphous material layer and its underlying stack around the hole and forces the amorphous material layer to lift up from the substrate;
• and
• removing the carbon layer through the hole so that the amorphous material layer and the gate electrode around the hole are partially separated from and float over the substrate.

A method of manufacturing a gate electrode having a floating structure lifting up from a substrate in a field emission device, the method comprising the steps of:

• forming a cathode on the substrate;
• forming a gate insulation layer on the cathode to a predetermined thickness,
• forming a gate electrode on the gate insulation layer;
• forming an upper insulation layer having an opening portion on the gate electrode to a predetermined thickness;
• forming a catalytic layer on the top of the gate electrode exposed at the bottom of the opening portion of the upper insulation layer;
• forming an amorphous material layer on a resultant stack to a predetermined thickness;
• forming a second gate electrode on the amorphous material layer;
• forming a hole corresponding to the opening portion from the top of the second gage electrode to directly below exposing the surface of either the catalytic layer or the cathode;
• supplying a reactant gas comprising hydrogen gas and carbon oxide gas through the hole while heating the substrate so that a carbon layer is grown between the amorphous material layer and its underlying stack surrounding the hole and forces the amorphous material layer to lift up from the substrate;
• and
• removing the carbon layer through the hole so that the amorphous material layer and the second gate electrode around the hole are partially separated from and float over the substrate.

A method of manufacturing a field emission device including a gate electrode having a floating structure, the method comprising:

• forming a cathode on a substrate;
• forming a gate insulation layer on the cathode to a predetermined thickness;
• forming a gate electrode on the gate insulation layer;
• forming an upper insulation layer having an opening portion on the gate electrode to a predetermined thickness;
• forming a catalytic layer on the top of the gate electrode exposed at the bottom of the opening portion of the upper gate insulation layer;
• forming an amorphous material layer on a resultant stack to a predetermined thickness;
• forming a second gate electrode on the amorphous material layer;
• forming a hole corresponding to the opening portion from the top of the second gage electrode to directly below exposing the surface of either the catalytic layer or the cathode;
• supplying a reactant gas comprising hydrogen gas and carbon oxide gas through the hole while heating the substrate so that a carbon layer is grown between the amorphous material layer and its underlying stack surrounding the hole and forces the amorphous material layer to lift up from the substrate;
• removing the carbon layer through the hole so that the amorphous material layer and the second gate electrode around the hole are partially separated from and float over the substrate;
• supplying a photoresist into the hole and on the second gate electrode to fill the hole with the photoresist and form a photoresist film on the second gate electrode to a predetermined thickness;
• removing the photoresist from the hole;
• growing a catalytic material on the top of the cathode exposed at the bottom of the hole to form a catalytic layer for growing carbon nano tubes (CNTs);
• depositing a CNT component material on the entire surface of a resultant stack to form a CNT array on the catalytic layer at the bottom of the hole;
• and
• removing the photoresist from a portion surrounding the hole in a resultant stack and from the second gate electrode so that unnecessary components including the catalytic material are removed.