Switch-variable optical attenuator and switch arrays

An optical attenuator comprising:

• a member comprising an opening and a reflecting surface;
• first, second and third light transmitting elements, said first and third elements being disposed to receive first and second light signals from said member;
• and
• means for moving said member so as to selectively position said opening intermediate a portion of the optical path between said first and second light transmitting elements.

A method for fabricating a switch for directing the path of a light signal, said method comprising:

• selecting a SOI wafer having two silicon layers and a layer of silicon dioxide therebetween;
• patterning the top and bottom sides of said wafer;
• etching an initial portion via-hole in said bottom side of said silicon wafer;
• etching at least one V-groove and depositing a mirror on said top side of said silicon wafer;
• growing a thin layer of silicon dioxide on said at least one V-groove and said mirror;
• removing a film of silicon nitride on said silicon wafer, said silicon nitride film being formed during manufacture of said wafer;
• etching an opening in said mirror;
• removing said thin layer of silicon dioxide from said mirror surface, and removing a portion of said layer of silicon dioxide in said top side of said silicon wafer to form a via-hole through the entirety of said wafer, wherein said via-hole is formed between the edges of said initial portion via-hole in said bottom side of said silicon wafer and said via-hole is formed between the edges of said mirror and said V-grooves in said top side of said silicon wafer;
• oxidizing said wafer with silicon dioxide;
• metalizing first and second surfaces of said wafer, said first and second surfaces forming first and second electrodes, respectively;
• and
• applying contact pads to said silicon wafer in electrical connection to said electrodes.

A method for fabricating an optical attenuator, said method comprising:

• selecting a SOI wafer having two silicon layers and a layer of silicon dioxide therebetween;
• patterning the top and bottom sides of said wafer;
• etching an initial portion via-hole in said bottom side of said silicon wafer;
• etching at least one V-groove and depositing a mirror on said top side of said silicon wafer;
• growing a thin layer of silicon dioxide on said at least one V-groove and said mirror;
• removing a film of silicon nitride on said silicon wafer, said film formed during manufacture of said wafer;
• etching an opening in said mirror;
• removing said thin layer of silicon dioxide on said mirror surface, and removing a portion of said layer of silicon dioxide in said top side of said silicon wafer to form a via-hole through the entirety of said wafer, wherein said via-hole is formed between the edges of said initial portion via-hole in said bottom side of said silicon wafer and said via-hole is formed between the edges of said mirror and said V-grooves on said top side of said silicon wafer;
• oxidizing said wafer with silicon dioxide;
• metalizing first and second surfaces of said wafer, said first and second surfaces forming first and second electrodes, respectively;
• and
• applying contact pads to said silicon wafer in electrical connection to said electrodes.

A method for directing the path of a light signal, said method comprising:

• providing a switch for directing the path of a light signal, said switch comprising:
• a member comprising an opening and a reflecting surface;
• first, second and third light transmitting elements, said first and third elements being disposed to receive first and second light signals from said member;
• and
• means for moving said member so as to selectively position said hole intermediate said first and second light transmitting elements, so as to optically couple said first and second light transmitting elements;
• positioning said hole of said member intermediate first and second light transmitting elements, wherein said switch optically couples said first and second light transmitting elements.