Method for improved programming efficiency in flash memory cells
AssigneeWinbond Electronics Corp.
InventorsShi-Tron Lin, Wei-Fan Chen
Life of this patent
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Abstract
A method of operating a non-volatile memory device includes providing the non-volatile memory device with a body of first conductivity, a source region of second conductivity, a drain region of second conductivity on the body, and a control gate over the body adjacent to the source and drain regions. A first voltage of first polarity is applied to the control gate. A second voltage of first polarity is applied to the drain region, the second voltage being less than about 5.6 volts. A third voltage of second polarity is applied to the source region.
Claims40
A method of operating a non-volatile memory device, comprising:
- providing the non-volatile memory device with a body of first conductivity, a source region of second conductivity, a drain region of second conductivity on the body, and a control gate over the body adjacent to the source and drain regions;
- applying a first voltage of first polarity to the control gate;
- applying a second voltage of first polarity to the drain region, the second voltage being less than about 5.1 volts;
- and
- applying a third voltage of second polarity to the source region.
A method of programming a non-volatile memory device, comprising:
- providing the non-volatile memory device with a body of first conductivity, a source region of second conductivity, a drain region of second conductivity on the body, and a control gate over the body adjacent to the source and drain regions;
- applying a first voltage of first polarity to the control gate;
- applying a second voltage of first polarity to the drain region;
- and
- applying a third voltage of second polarity to the source region, the third voltage being at least 0.65 volt with respect to the second polarity.
A method of programming a non-volatile memory device, comprising:
- providing the non-volatile memory device with a body of first conductivity, a source region of second conductivity, a drain region of second conductivity on the body, and a control gate over the body adjacent to the source and drain regions;
- applying a first voltage of first polarity to the control gate;
- applying a second voltage of first polarity to the drain region;
- and
- applying a first current of second polarity to the source region.
A method of programming a non-volatile memory device, comprising:
- providing the non-volatile memory device with a body of first conductivity, a source region of second conductivity, a drain region of second conductivity on the body, and a control gate over the body adjacent to the source and drain regions;
- and
- applying a relative voltage of less than about 4 volts between the drain region and the body.
A method of programming a non-volatile memory device, comprising:
- providing the non-volatile memory device with a body of first conductivity, a source region of second conductivity, a drain region of second conductivity on the body, and a control gate over the body adjacent to the source and drain regions;
- applying a first voltage of first polarity to the control gate;
- applying a second voltage of first polarity to the drain region;
- applying a first current of second polarity to the source region;
- and
- applying a ground potential to the body.
Dependencies are inferred from the claim text.