Low temperature systems for use with magnetoresistive circuit components
AssigneeHewlett-Packard Development Company, L.P.
InventorColin Andrew Stobbs
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Abstract
A method is provided for electrically coupling a magnetoresistive memory MRAM circuit component to a host component. The method includes keeping the temperature of the MRAM circuit component below about 200° C. while aligning at least one interface feature of the MRAM circuit component with at least one interface feature of the host component and electrically coupling the interface features using a z-axis conductive material. In certain exemplary implementations, the temperature of the magnetoresistive memory circuit component is keep below about 180° C. It has been found that lower temperatures such as these eliminate the need to conduct additional MRAM annealing processes to re-set/re-pin a selected magnetic direction in certain materials within the MRAM.
Claims13
A method for electrically coupling a magnetoresistive memory circuit component to a host component, the method comprising:
- while keeping a temperature of the magnetoresistive memory circuit component below about 200° C.:
- aligning at least one interface feature of the magnetoresistive memory circuit component with at least one interface feature of the host component;
- and
- electrically coupling said at least one interface feature of the magnetoresistive memory circuit component with said at least one interface feature of the host component using a z-axis conductive material.
An apparatus comprising:
- a magnetoresistive memory circuit component having a plurality of memory interface features;
- a host component having a plurality of host interface features;
- and
- a layer of z-axis conductive material in electrical contact between at least a portion of said plurality of memory interface features and at least a portion of said plurality of host interface features.
Dependencies are inferred from the claim text.