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US 2003/0112655 A1Published application
Magnetic memory device and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorKeiji Hosotani
Life of this patent
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Abstract
A magnetic memory device includes magneto resistive elements which are laminated in each cell with easy axes of magnetization set in different directions, each magneto resistive elements having at least two resistance values, and first and second wirings which sandwich the magneto resistive elements and are arranged to extend in different directions from each other.
Claims33
A magnetic memory device comprising:
- magneto resistive elements which are laminated in each cell with easy axes of magnetization thereof set in different directions, the magneto resistive elements having at least two resistance values, and
- first and second wirings which sandwich the magneto resistive elements and are arranged to extend in different directions from each other.
A magnetic memory device manufacturing method comprising:
- forming a first wiring which extends in a first direction,
- laminating magneto resistive elements above the first wiring, the magneto resistive elements respectively having magnetically fixed layers and having at least two resistance values,
- forming a second wiring which extends in a second direction different from the first direction on the magneto resistive elements, and
- sequentially performing heat treatments in a magnetic field at different temperatures with respect to the magneto resistive elements and fixing magnetization directions of the magnetically fixed layers of the magneto resistive elements in different directions.
1 more element
Dependencies are inferred from the claim text.