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US 2003/0112654 A1Published application
Segmented write line architecture
AssigneeInfineon Technologies North America Corp.
InventorsStefan Lammers, Christian Arndt
Life of this patent
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Abstract
This invention presents a novel write line segmentation architecture for writing magnetoresitive random access memories (MRAM). Only the memory cells in a selected segment get a high hard axis field generated by a write line current. Memory cells of deselected segments do not receive this hard axis field. This prevents an undesired state change in particularly sensitive memory cells.
Claims25
A magnetoresistive random access memory (MRAM) storage device with a segmented write line architecture, the MRAM storage device comprising:
- a plurality of MRAM memory cells arranged into segments;
- a first master wordline, which can be decoded out using address bits to select a single local wordline;
- a second master wordline which can be decoded out using address bits to select the single local wordline;
- a return line coupled to the single local wordline;
- and
- wherein:
- the single local wordline is coupled to a segment of MRAM memory cells;
- the first and second master wordlines are used to provide a hard axis current of desired magnitude for use in aligning the MRAM memory cells;
- and
- the return line used to sink the hard axis current used to align the magnetic dipole.
7 more elements
Dependencies are inferred from the claim text.