High-frequency circuit
AssigneeNEC Compound Semiconductor Devices, Ltd.
InventorYoshikazu Nishimura
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AssigneeNEC Compound Semiconductor Devices, Ltd.
InventorYoshikazu Nishimura
Estimating the term…
A high-frequency circuit includes a bias circuit to which a gain control voltage is input and which controls gains of transistors arranged in the bias circuit in accordance with the gain control voltage, and a band-switching circuit which switches a band and through which a reference current runs. The band-switching circuit includes two transistors electrically connected in cascode to each other, one of the two transistors which is located downstream of the other has a gate electrically connected to a gain control voltage terminal through which the gain control voltage is input, and each of the two transistors is comprised of a complete enhancement mode field effect transistor. The bias circuit includes a pair of transistors and a band-switching transistor. The band-switching transistor is electrically connected in series to a line through which the gain control voltage is supplied, and the gain control voltage is applied to the pair of transistors through the band-switching circuit.
A high-frequency circuit comprising:
A high-frequency circuit comprising:
A high-frequency circuit comprising:
Dependencies are inferred from the claim text.