Power semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKousuke Yoshimura
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Abstract
A power semiconductor device includes an input signal processor circuit to which control signals are input, and power device driving circuits for individually driving power devices based on output signal of the input signal processor circuit. Level shift circuits are individually inserted between the input signal processor circuit and the power device driving circuit on a p-side and between the input signal processor circuit and the power device driving circuit on an n-side to electrically insulate GND lines for the p-side and n-side power device driving circuits and a GND line for the input signal processor circuit.
Claims9
A power semiconductor device comprising:
- an input signal processor circuit to which control signals are input, and
- power device driving circuits for driving power devices based on output signal of the input signal processor circuit, and
- level shift circuits which are individually inserted between the input signal processor circuit and the power device driving circuit on a p-side and between the input signal processor circuit and the power device driving circuit on an n-side to electrically insulate ground lines for the p-side and n-side power device driving circuits and a ground line for the input signal processor circuit.
Dependencies are inferred from the claim text.