Method for fabricating magnetic field sensor having multi-layer structure and RF semiconductor device equipped with magnetic field sensor

Abstract

A method for fabricating a magnetic field sensor having a multi-layer structure and an RF semiconductor device equipped with it are disclosed. The method comprises: forming a barrier film on a lower layer, forming a magnetic metal film on the barrier film, forming a plurality of trenches with a desired thickness in the magnetic metal film, forming a copper film in the plurality of trenches, so that multiple layers of magnetic metal film and copper film can be formed repeatedly. Also, the RF semiconductor device equipped with the magnetic field sensor comprises: a magnetic field sensor made by forming a plurality of magnetic metal film and copper film layers repeatedly, the magnetic field sensor being attached on a semiconductor substrate, metal wirings formed on the semiconductor substrate at both sides of the magnetic field sensor, an insulating film formed on an entire structure of the semiconductor substrate, inclusive of the metal wirings, an inductor formed on the insulating film corresponding to the magnetic field sensor with the exception of a central portion thereof.

Dependencies are inferred from the claim text.