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US 2003/0111739 A1Published application
Semiconductor device and package thereof
AssigneeKabushiki Kaisha Toshiba
InventorsShigeo Kouzuki, Takao Emoto
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor circuit which is formed inside; and an electrode structure which is formed on a first surface thereof. The electrode structure has a first electrode layer and a metal plating layer. The first electrode layer is formed of a first metal and is connected to the semiconductor circuit. The metal plating layer is formed of a second metal on the first electrode layer. The second metal is capable of being soldered on an extraction electrode outside of the semiconductor device.
Claims20
A semiconductor device comprising:
- a semiconductor circuit which is formed inside of said semiconductor device;
- and
- an electrode structure which is formed on a first surface of the semiconductor device,
- said electrode structure including a first electrode layer and a metal plating layer which is formed on said first electrode layer, said first electrode layer being formed of a first metal and connected to said semiconductor circuit, said metal plating layer being formed of a second metal, and said second metal being capable of being soldered onto an extraction electrode outside of said semiconductor device.
1 more element
A package for semiconductor device comprising:
- a semiconductor device including a semiconductor circuit and an electrode structure, said semiconductor circuit being formed inside of said semiconductor device, said electrode structure being formed on a first surface of said semiconductor device and having a first electrode layer and a metal plating layer which is formed on said first electrode layer,
- said first electrode layer being formed of a first metal and connected to said semiconductor circuit,
- said metal plating layer being formed of a second metal, said second metal being capable of being soldered onto an extraction electrode outside of said semiconductor device;
- a supporting substrate which supports thereon said semiconductor device;
- a lead terminal which is formed of a third metal and connected to said first electrode layer;
- and
- a metal plate which is formed of a fourth metal to serve as said extraction electrode and which connects said lead terminal to said first electrode layer via said metal plating layer.
4 more elements
A package for semiconductor device comprising:
- a MOS type high power semiconductor device including a semiconductor circuit and an electrode structure, said semiconductor circuit being formed inside of said semiconductor device, said electrode structure being formed on a first surface of said semiconductor device and having a first electrode layer, a metal plating layer and a second electrode layer,
- said first electrode layer being formed of a first metal and connected to said semiconductor circuit, said metal plating layer being formed of a second metal on said first electrode layer, said second electrode layer being formed of a third metal on a second surface which is the opposite surface to said first surface, said second metal being capable of being soldered onto an extraction electrode outside of said semiconductor device, said first electrode layer and said metal plating layer forming at least one electrode of gate and source electrodes, and said second electrode layer forming a drain electrode;
- a frame plate which is formed of a fourth metal, supports said semiconductor device on said second surface of said semiconductor device and is connected to said second electrode layer;
- a lead terminal which is formed of a fifth metal and is connected to said first electrode layer;
- and
- a metal plate which is formed of a sixth metal to serve as said extraction electrode and which connects said lead terminal to said first electrode layer via said metal plating layer.
3 more elements
Dependencies are inferred from the claim text.