Semiconductor device and method manufacuring the same

A semiconductor device comprising;

• a substrate in which semiconductor elements are formed;
• metal wiring for interconnecting the semiconductor elements;
• and
• an insulative diffusion barrier layer for covering at least a portion of the metal wiring;
• wherein at least a portion of the surface on the periphery of the metal wiring has a region made of a material comprising copper as a main ingredient, a portion of the region made of a material comprising copper as the main ingredient is in contact with the insulative diffusion barrier layer, and the insulative diffusion barrier layer is formed by using a gas mixture containing at least an alkoxy silane represented by the general formula (RO)nSiH4−n (where n is an integer in a range from 1 to 3 and R represents an alkyl group, an aryl group or a derivative thereof) and an oxidative gas by a plasma CVD method.

A semiconductor device comprising:

• a substrate in which semiconductor elements are formed;
• metal wiring for interconnecting the semiconductor elements;
• and
• an insulative diffusion barrier layer for covering at least a portion of the metal wiring;
• wherein at least a portion of the surface on the periphery of the metal wiring has a region made of a material comprising copper as a main ingredient, a portion of the region made of the material comprising copper as the main ingredient is in contact with the insulative diffusion barrier layer, and the insulative diffusion barrier layer comprises oxygen, silicon and nitrogen as main constituent elements, a concentration of the nitrogen being from 0.3 to 14 atm %.

A semiconductor device comprising;

• a substrate in which semiconductor elements are formed;
• first metal wiring for interconnecting the semiconductor elements;
• an insulative diffusion barrier layer for covering at least the upper surface of the first metal wiring;
• a first insulative film for covering the insulative diffusion barrier layer;
• an intermediate stopper film for covering the first insulative film;
• a second insulative film for covering the intermediate stopper film;
• a protection insulative film for covering the second insulative film;
• and
• second metal wiring filled in openings provided in the insulative diffusion barrier layer, the first insulative film, the intermediate stopper film, the second insulative film and the protection insulative film to ensure electric connection to the first metal wiring;
• wherein a portion of the first metal wiring in contact with the insulative diffusion barrier layer has a region made of a material comprising copper as a main ingredient, a portion of the region made of the material comprising copper as the main ingredient is in contact with the insulative diffusion barrier layer, and the insulative diffusion barrier layer has characteristics that a specific dielectric constant is 5 or less, a leak current of the insulative diffusion barrier layer at a test temperature of 140° C., under an electric field strength of 2 MV/cm is 10 nA or less per 1 cm2, and the dielectric breakdown lifetime of the insulative diffusion barrier layer when copper is used as an anode at a temperature of 140° C. is at least 100 years.

A semiconductor device comprising:

• a substrate in which semiconductor elements are formed;
• first metal wiring for interconnecting the semiconductor elements;
• an insulative diffusion barrier layer for covering at least the upper surface of the first metal wiring;
• a first insulative film for covering the insulative diffusion barrier layer;
• an intermediate stopper film for covering the first insulative film;
• a second insulative film for covering the intermediate stopper film;
• a protection insulative film for covering the second insulative film;
• and
• second metal wiring filled in openings provided in the insulative diffusion barrier layer, the first insulative film, the intermediate stopper film, the second insulative film and the protection insulative film to ensure electric connection to the first metal wiring;
• wherein a portion of the first metal wiring in contact with the insulative diffusion barrier layer has a region made of a material comprising copper as a main ingredient, a portion of the region made of the material comprising copper as the main ingredient is in contact with the insulative diffusion barrier layer, and the insulative diffusion barrier layer is formed by using a gas mixture containing at least an alkoxy silane represented by the general formula (RO)nSiH4−n (where n is an integer in a range from 1 to 3 and R represents an alkyl group, an aryl group or a derivative thereof) and an oxidative gas, by a plasma CVD method.

A semiconductor device comprising:

• a substrate in which semiconductor elements are formed;
• first metal wiring for interconnecting the semiconductor elements;
• an insulative diffusion barrier layer for covering at least the upper surface of the first metal wiring;
• a first insulative film for covering the insulative diffusion barrier layer;
• an intermediate stopper film for covering the first insulative film;
• a second insulative film for covering the intermediate stopper film;
• a protection insulative film for covering the second insulative film;
• and
• second metal wiring filled in openings provided in the insulative diffusion barrier layer, the first insulative film, the intermediate stopper film, the second insulative film and the protection insulative film to ensure electric connection to the first metal wiring;
• wherein a portion of the first metal wiring in contact with the insulative diffusion barrier layer has a region made of a material comprising copper as a main ingredient, a portion of the region made of the material comprising copper as the main ingredient is in contact with the insulative diffusion barrier layer, and the insulative diffusion barrier layer comprises oxygen, silicon and nitrogen as main constituent elements and a concentration of the nitrogen is from 0.3 to 14 atm %.

A method of manufacturing a semiconductor device at least comprising the steps of;

• forming, on a substrate in which semiconductor elements are formed, an insulative etching stopper layer having openings;
• forming metal wiring having a region at least a portion of the upper surface thereof made of a material comprising copper as a main ingredient to fill the openings provided in the etching stopper layer;
• and
• forming an insulative diffusion barrier layer to cover the region of the metal wiring made of the material comprising copper as the main ingredient;
• wherein a dry etching rate of the insulative etching stopper layer is one-half or less of that of the insulative diffusion barrier layer.

A method of manufacturing a semiconductor device at least comprising the steps of:

• forming, on a substrate in which semiconductor elements are formed, first metal wiring having a region at least a portion of the upper surface thereof made of a material comprising copper as a main ingredient;
• forming an insulative diffusion barrier layer to cover the region of the first metal wiring made of the material comprising copper as the main ingredient;
• forming a first insulative film, an intermediate stopper film, a second insulative film, a protection insulation film and an etching mask successively to cover the insulative diffusion barrier layer;
• making a first opening at a portion of the etching mask;
• making a second opening at a portion of the protection insulative film exposed to the bottom of the first opening;
• making a third opening in the second insulative film through the second opening;
• removing the intermediate stopper layer exposed to the bottom of the third opening to make a fourth opening;
• simultaneously,
• removing the protection insulative film exposed to the bottom of the first opening;
• removing the second insulative film below the first opening made in the etching mask;
• simultaneously,
• removing the first insulative film below the fourth opening;
• and
• removing the insulative diffusion barrier layer exposed below the fourth opening to make an opening in the first metal wiring;
• wherein a dry etching rate of the intermediate stopper film is one-half or less of that of the insulative diffusion barrier layer.