Method of making semiconductor device using an interconnect
AssigneeIntel Corporation
InventorsJihperng Leu, Christopher D. Thomas
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Abstract
The present invention includes an embodiment that relates to method of forming an interconnect. The method includes the effect of reducing electromigration in a metallization. An article achieved by the inventive method includes a first interconnect disposed above a substrate; a first conductive diffusion barrier layer disposed above and on the first interconnect; an upper interconnect, that is either landed or unlanded and that is disposed above the first interconnect; and an upper conductive diffusion barrier layer disposed above and on the upper interconnect.
Claims30
In a microelectronic device, an article comprising:
- a first interconnect disposed above a substrate;
- a first conductive diffusion barrier layer disposed above and on the first interconnect;
- an upper interconnect, that is either landed or unlanded and that is disposed above the first interconnect;
- and
- an upper conductive diffusion barrier layer disposed above and on the upper interconnect.
An article comprising:
- a first interconnect disposed above a semiconductor substrate that includes at least one active device;
- a first conductive diffusion barrier layer disposed above and on the first interconnect;
- an upper interconnect, that is either landed or unlanded and that is disposed above the first interconnect;
- and
- an upper conductive diffusion barrier layer disposed above and on the upper interconnect.
A process of forming a metallization comprising:
- forming a first interlayer dielectric (ILD) layer above a substrate;
- forming a first recess in the first ILD layer;
- filling the first recess with a first interconnect;
- forming a conductive first diffusion barrier layer above an on the first interconnect;
- forming an upper ILD layer above the first conductive diffusion barrier layer;
- forming an upper recess in the upper ILD layer to optionally expose the first conductive diffusion barrier layer;
- forming an upper interconnect in the upper recess;
- and
- forming a conductive upper diffusion barrier layer above and on the upper interconnect.
Dependencies are inferred from the claim text.