Semiconductor device, stacked type semiconductor device, and manufacturing method of semiconductor device

A semiconductor device comprising:

• a substrate whose formation side has a connection member thereon;
• a semiconductor integrated circuit, having an electrode and covered with an insulating layer except for an electrode area having the electrode, which is fixed on the formation side so that the electrode area is exposed;
• and
• a wiring that is provided in accordance with plating so as to electrically connect the electrode to the connection member.

A semiconductor device comprising:

• a substrate whose formation side has a connection member thereon;
• two or more semiconductor integrated circuits each of which has an electrode, and is covered with an insulating layer except for an electrode area having the electrode, and is fixed on the formation side so that the electrode area is exposed;
• and
• a wiring that is provided in accordance with plating so as to electrically connect the electrode to the connection member.

A stacked type semiconductor device comprising a plurality of semiconductor devices, provided in a staked manner, each of which includes:

• a substrate whose formation side has a connection member thereon;
• a semiconductor integrated circuit, having an electrode and covered with an insulating layer except for an electrode area having the electrode, which is fixed on the formation side so that the electrode area is exposed;
• and
• a wiring that is provided in accordance with plating so as to electrically connect the electrode to the connection member, wherein
• there is provided a conductive body that is electrically connected to the connection member of each of the semiconductor devices, and the semiconductor devices are electrically connected to each other via the conductive body.