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US 2003/0111712 A1Published application
Low-dielectric constant structure with a multilayer stack of thin films with pores
AssigneeIntel Corporation
InventorEbrahim Andideh
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Abstract
The present invention describes a structure having a multilayer stack of thin films, the thin films being a low-dielectric constant material, the thin films having pores, and a method of forming such a structure.
Claims23
A structure comprising a multilayer stack of thin films, said thin films comprising a low-dielectric constant material, said thin films having pores.
A process comprising:
- obtaining a substrate;
- depositing a first thin film on said substrate with a first precursor comprising a first set of organic components;
- treating said first thin film to release said first set of organic components to leave a first set of pores;
- depositing a second thin film over said first thin film with a second precursor comprising a second set of organic compounds;
- and
- treating said second thin film to release said second set of organic components to leave a second set of pores.
3 more elements
A multilevel interconnect system comprising:
- a first metal level;
- a multilayer stack disposed over said first metal level, said multilayer stack comprising:
- a thin film, said thin film having a low dielectric constant, said thin film having pores;
- and
- a second metal level disposed over said multilayer stack.
2 more elements
Dependencies are inferred from the claim text.