Image sensor with pixel isolation system and manufacturing method therefor
AssigneeAgilent Technologies, Inc.
InventorsJeremy A. Theil, Dietrich W. Vook, Homayoon Haddad
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Abstract
An image sensor and method of manufacture therefor includes a substrate having pixel control circuitry. Dielectric layers on the substrate include interconnects in contact with the pixel control circuitry and with pixel electrodes. An intrinsic layer is over the pixel electrodes and has a gap provided between the pixel electrodes. An intrinsic-layer covering layer is over the intrinsic layer and a transparent contact layer over the intrinsic-layer covering and the interconnects. The intrinsic, intrinsic-layer covering, and transparent contact layer interact in different combinations to provide a pixel isolation system for the image sensor.
Claims20
A method for manufacturing an image sensor comprising:
- providing a substrate;
- forming control circuitry on the substrate;
- forming dielectric layers on the substrate;
- forming interconnects in the dielectric layers in contact with the control circuitry;
- forming pixel electrodes in contact with the interconnects;
- forming an intrinsic layer (i-layer) over the pixel electrodes;
- forming a gap in the i-layer between the pixel electrodes;
- forming an i-layer covering layer over the i-layer;
- and
- forming a transparent contact layer over the i-layer covering layer and the interconnects.
A method for manufacturing an image sensor comprising:
- providing a semiconductor substrate;
- forming pixel control circuitry on the substrate;
- forming dielectric layers on the substrate;
- forming interconnects in the dielectric layers in contact with the pixel control circuitry;
- forming pixel electrodes in contact with the interconnects, the pixel electrodes of a material selected from a group consisting of a conductive semiconductor material and a conductive metal;
- forming an intrinsic layer (i-layer) over the pixel electrodes;
- forming a gap in the i-layer between the pixel electrodes;
- forming a i-layer covering layer over the i-layer of a material selected from a group consisting of a p-doped material, an n-doped material, and a transparent conductive material;
- and
- forming a transparent contact layer over the i-layer covering layer and the interconnects, the transparent contact layer of a material selected from a group consisting of a transparent conductive material.
An image sensor comprising:
- a substrate;
- control circuitry on the substrate;
- dielectric layers on the substrate;
- interconnects in the dielectric layers in contact with the control circuitry;
- pixel electrodes in contact with the interconnects;
- an intrinsic layer (i-layer) over the pixel electrodes having a gap provided therein between the pixel electrodes;
- an i-layer covering layer over the i-layer;
- and
- a transparent contact layer over the i-layer covering layer and the interconnects.
An image sensor comprising:
- a semiconductor substrate;
- pixel control circuitry on the substrate;
- dielectric layers on the substrate;
- interconnects in the dielectric layers in contact with the pixel control circuitry;
- pixel electrodes in contact with the interconnects, the pixel electrodes of a material selected from a group consisting of a conductive semiconductor material and a conductive metal;
- an intrinsic layer (i-layer) over the pixel electrodes and having a gap provided therein between the pixel electrodes;
- a i-layer covering layer over the i-layer of a material selected from a group consisting of a p-doped material, an n-doped material, and a transparent conductive material;
- and
- depositing a transparent contact layer over the second layer and the interconnects.
Dependencies are inferred from the claim text.