Method and article of manufacture for micro-lens resulting from multi-stage fabrication technique
OwnerSelim S. Bencuyainventor
Life of this patent
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Abstract
Micro-lenses are formed on the surface of a semiconductive circuit through a plurality of processing stages. In each stage, an alternate lens placement pattern is imparted onto micro-lens suitable material. Unwanted material is removed and micro-lenses are formed from the remaining material. Subsequent stages are applied until all desired micro-lenses in a structure are defined and formed from alternate placement patterns.
Claims32
A method for depositing micro-lenses on a semiconductive circuit comprising the steps of:
- successively applying a plurality of coats of micro-lens suitable material to the surface of a semiconductive circuit wherein the current coat is imparted with a succeeding one of a plurality of lens formation patterns;
- removing unwanted portions of the current coat of micro-lens suitable material;
- and
- forming a plurality of micro-lenses from the remaining portion of the current coat of micro-lens suitable material.
A method for depositing micro-lenses on a semiconductive circuit comprising the steps of:
- applying a first coat of micro-lens suitable material to the surface of a semiconductive circuit;
- imparting a first lens formation pattern onto the first coat of micro-lens suitable material;
- removing unwanted portions of the first coat of micro-lens suitable material;
- forming a first plurality of micro-lenses from the remaining first coat of microlens suitable material;
- applying a second coat of micro-lens suitable material to the semiconductive circuit;
- imparting a second lens formation pattern to the second coat of micro-lens suitable material;
- removing unwanted portions of the second coat of photo-resist;
- and
- forming a second plurality of micro-lenses from the remaining second coat of micro-lens suitable material.
A method for depositing micro-lenses on a semiconductive circuit comprising the steps of:
- applying a first coat of micro-lens suitable material to the surface of the semiconductive circuit;
- imparting a first lens formation pattern onto the first coat of micro-lens suitable material;
- removing unwanted portions of the first coat of micro-lens suitable material;
- applying a second coat of micro-lens suitable material to the to the surface of the semiconductive circuit;
- imparting a second lens formation pattern onto the second coat of micro-lens suitable material;
- removing unwanted portions of the second coat of micro-lens suitable material;
- and
- forming a plurality of micro-lenses from the remaining portions of the first and second coats of micro-lens suitable material.
A micro-lens structure comprising:
- plurality of micro-lenses disposed proximate to radiation sensitive active regions formed in a semiconductive circuit located wherein each active region is formed within a boundary region perimeter and
- wherein each micro-lens is formed from an island of micro-lens suitable material deposited onto the surface of the semiconductive circuit and wherein each island of micro-lens suitable material occupies an area within the boundary region larger than a resolution setback relative to the perimeter of the boundary region.
A semiconductive circuit image sensor comprising:
- surface;
- plurality of radiation sensitive active regions disposed in the surface wherein each active regions is encompassed by a boundary perimeter;
- sensing circuitry to sense the state of the plurality of active regions;
- and
- plurality of micro-lenses disposed proximate to and coincident with the plurality of active regions
- wherein each micro-lens is formed from an island of micro-lens suitable material deposited onto the surface of the semiconductive circuit and
- wherein each island of micro-lens suitable material occupies an area within the boundary region larger than a resolution setback relative to the perimeter of the boundary region.
Dependencies are inferred from the claim text.