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US 2003/0111699 A1Published application
Methods and apparatus for inducing stress in a semiconductor device
AssigneeTexas Instruments Incorporated
InventorsChristoph Wasshuber, Keith A. Joyner
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Abstract
Methods and apparatus are disclosed for selectively inducing stress in a semiconductor device, wherein a first region of a substrate is implanted so as to induce stress in a second region. An electrical device is formed at least partially in the second region, wherein the induced stress therein may improve one or more operational characteristics of the device, such as channel region carrier mobility.
Claims28
A method of fabricating a semiconductor device, comprising:
- selectively implanting a first region in a substrate so as to induce stress in a second region in the substrate;
- and
- forming an electrical device in the substrate, at least a portion of the electrical device being in the second region.
A semiconductor device, comprising:
- first and second regions in a substrate, the first region begin implanted so as to induce stress in the second region;
- and
- an electrical device, at least a portion of the electrical device being formed in the second region.
A method of improving carrier mobility in a channel region of a MOSFET device, comprising:
- implanting a first region in a substrate so as to induce stress in a second region in the substrate;
- and
- forming at least a portion of the channel region in the second region of the substrate.
Dependencies are inferred from the claim text.