Body contact silicon-on-insulator transistor and method

A method for fabricating a body contact transistor, comprising:

• providing a semiconductor structure having a semiconductor substrate formed over an insulator;
• lightly doping the semiconductor substrate to form a body region;
• forming a gate on an upwardly facing surface of the semiconductor substrate and separated from the upwardly facing surface of the semiconductor substrate by a gate insulator layer, the gate defining a source region, a drain region, and a contact region, the contact region coupled to the body region;
• masking the contact region and a portion of the gate disposed adjacent the contact region;
• and
• heavily doping the source region, the drain region and an unmasked portion of the gate with a material having a conductivity substantially opposite a conductivity of the body.

A body contact transistor, comprising:

• a body region of a first conductivity type formed over an insulator;
• a source region and a drain region, each of a second conductivity type substantially opposite the first conductivity type, formed adjacent the body region;
• and
• a gate formed on an upwardly facing surface of the body region and separated from the upwardly facing surface of the body region by a gate insulator layer, the gate having a doped portion of a third conductivity type disposed adjacent the source region and the drain region, the third conductivity type substantially opposite to the first conductivity type, the gate having an undoped portion disposed at an end of the gate and adjacent a contact region, the contact region coupled to the body region.