Process for the selective formation of salicide on active areas of MOS devices
AssigneeSTMicroelectronics S.r.l.
InventorsMaurizio Moroni, Cesare Clementi
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Abstract
Process for forming salicide on active areas of MOS transistors, each MOS transistor comprising a gate and respective source and drain regions, the source and drain regions each comprising a first lightly doped sub-region adjacent the gate and a second highly doped sub-region spaced apart from the gate. The salicide is formed selectively at least over the second highly doped sub-regions of the source and drain regions of the MOS transistors, and not over the first lightly doped sub-region.
Claims26
A process for forming salicide on active areas of MOS transistors, each MOS transistor comprising a gate and respective source and drain regions, the source and drain regions each comprising a first lightly doped sub-region adjacent to the gate and a second highly doped sub-region spaced apart from the gate wherein the salicide is formed selectively at least over said second highly doped sub-regions of the source and drain regions of the MOS transistors, and not over said first lightly doped sub-regions.
A method of forming salicide over active areas of a MOS transistor having a gate, a source region and a drain region, said method comprising:
- defining a lightly doped sub-region and a highly doped sub-region of the source region;
- defining a lightly doped sub-region and a highly doped sub-region of the drain region;
- and
- forming salicide over the highly doped sub-regions but not over the lightly doped sub-regions of the respective source and drain regions.
A semiconductor device having a gate, a source and a drain region wherein the source and drain regions respectively comprises lightly doped sub-regions adjacent to the gate and highly doped sub-regions spaced apart from the gate, said highly doped sub-regions being covered by salicide and said lightly doped sub-regions being covered by a protective layer.
Dependencies are inferred from the claim text.