Method of fabricating transistor

A method of fabricating a transistor, comprising the steps of:

• forming an electrode portion on a main surface of a semiconductor substrate of a first conductive type via an insulating film;
• and
• forming a predetermined impurity region in each of a region in said semiconductor substrate positioned on the side of one of side faces of said electrode portion, and a region in said semiconductor substrate positioned on the side of the other side face of said electrode portion, wherein
• the step of forming said electrode portion includes a step of forming a first electrode portion and a second electrode portion, wherein
• the step of forming said impurity region includes the steps of:
• forming a resist pattern having a predetermined film thickness including a portion for exposing a first surface of said semiconductor substrate from said one of side faces of said first electrode portion to a position apart from said first electrode portion by a first distance and exposing a second surface of said semiconductor substrate from said other side face of said first electrode portion to a position apart from said first electrode portion by a second distance, and a portion for exposing a third surface of said semiconductor substrate from said one of side faces of said second electrode portion to a position apart from said second electrode portion by a third distance and exposing a fourth surface of said semiconductor substrate from said other side face of said second electrode to a position apart from said second electrode by a fourth distance;
• and
• introducing an impurity of a predetermined conductive type by using said resist pattern as a mask, and wherein
• in the step of forming said resist pattern,
• said predetermined film thickness and at least said first distance are set so as to prevent said impurity of the predetermined conductive type from being obliquely introduced from said one of the side faces into the portion of the region in said semiconductor substrate positioned directly under said first electrode at a predetermined angle with respect to said semiconductor substrate, and
• said predetermined film thickness, said third distance, and said fourth distance are set so that said impurity of the predetermined conductive type is introduced obliquely to the portion of the region in said semiconductor substrate positioned directly under said second electrode from said one of side faces and said other side face at said predetermined angle with respect to semiconductor substrate.