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US 2003/0111675 A1Published application
Doped absorption for enhanced responsivity for high speed photodiodes
AssigneeJDS Uniphase Corporation
InventorJie Yao
Life of this patent
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Abstract
A photodiode with a semiconductor intrinsic light absorption layer has at least one p-doped light absorption layer or an n-doped light absorption layer, and preferably both. The diode also has a cathode electrode and an anode electrode electrically couple with the p-doped light absorption layer or the n-doped light absorption layer.
Claims18
A photodiode with comprising:
- a semiconductor intrinsic light absorption layer;
- at least one of a p-doped light absorption layer and an n-doped light absorption layer;
- and, a cathode electrode and an anode electrode electrically couple with the p-doped light absorption layer or the n-doped light absorption layer.
Dependencies are inferred from the claim text.