Method and system for molecular charge storage field effect transistor
AssigneeThe Regents of the University of California
InventorsVeena Misra, David F. Bocian, Werner G. Kuhr, Jonathan S. Lindsey
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Abstract
A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules between a gate and channel of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthetic chemistry and novel elements.
Claims51
A charge storage transistor comprising:
- a substrate comprising a channel region;
- a source and a drain in electrical contact with said channel region, such that current can flow between said source and said drain through said channel region and affected by the conductance of said channel region;
- one or more charge storage molecules proximate to said channel region, wherein charge stored on said molecules affects the conductance of said channel region;
- and
- a gate proximate to said one or more charge storage molecules such that a voltage between said gate and said source or said drain will change the charge stored on said charge storage molecules.
A method of fabricating a hybrid transistor comprising:
- performing higher-temperature metal, semiconductor and insulator fabrication steps first;
- and
- attaching one or more charge storage molecules at lower temperatures.
A method of fabricating a hybrid transistor comprising:
- forming source/drain regions;
- forming a gate region
- first performing higher-temperature semiconductor and insulator fabrication steps;
- and
- attaching one or more charge storage molecules at lower temperatures.
The method according to claim 34 wherein said linker comprises one or more of:
- alkyl, aryl, hydroxyalkyl, hydroxyaryl, mercaptoalkyl, mercaptoaryl, selenylalkyl, selenylaryl, tellurylalkyl, or tellurylaryl, cyanoalkyl, cyanoaryl, isocyanoalkyl, isocyanoaryl, carboxyalkyl, carboxyaryl, aminoalkyl, aminoaryl, dihydroxyphosphorylalkyl, dihydroxyphosphorylaryl, trichlorosilylalkyl, trichlorosilylaryl, trimethoxysilylalkyl, trimethoxysilylaryl linkers.
A method of forming a semiconductor structure, wherein the method comprises the steps of:
- providing a semiconductor substrate;
- forming a temporary feature having a first side and a second side over the semiconductor substrate;
- forming spacers around said temporary feature over the semiconductor substrate;
- forming a first doped region in the semiconductor substrate directly adjacent to the first side of the temporary feature and a second doped region in the semiconductor substrate directly adjacent to the second side of the temporary feature;
- planarizing a top surface of the dielectric layer to expose a top portion of the temporary feature while leaving bottom-most regions of the dielectric layer on the surface of the semiconductor structure;
- removing the temporary feature to form an opening in the dielectric layer;
- filling the opening with a dielectric/charge storage molecule mixture to create a charge storage region;
- and
- depositing a metal over said dielectric/charge storage molecule mixture to create a metal gate electrode.
Dependencies are inferred from the claim text.