US 2003/0111668 A1 · Method of manufacturing semiconductor device including steps of forming groove and recess, and semiconductor device

Abstract

An interlayer insulation film (31) on a plug (11) is etched using a silicon nitride film (32) used in pattern etching of a bit line (12) as a hard mask such that the plug (11) projects into a groove (40). Another silicon nitride film (33) is provided to cover an exposed surface of the groove (40), the bit line (12) and the silicon nitride film (32), thereby forming another interlayer insulation film (34) on the silicon nitride film (33) to fill the groove (40). The silicon nitride films (33, 32) are used as an etching stopper to etch the interlayer insulation film (34) above the plug (11). The silicon nitride film (33) on the plug (11) is etched to expose the plug (11) into a recess.

Claims10

Dependent claims

A method of manufacturing a semiconductor device, comprising the steps of:

(a) forming a first insulation film on an underlying substrate and providing a first conductive portion in said first insulation film;
(b) forming a conductive film on said first insulation film;
(c) forming a second insulation film on said conductive film leaving a space over said first conductive portion;
(d) patterning said conductive film using said second insulation film as a mask to form a second conductive portion;
and
(e) etching said first insulation film using said second insulation film as a mask after said step (d) to form a groove in said first insulation film.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

10/266,608Filed 9 Oct 2002

Priority

JP 2001-38576919 Dec 2001

Published

19 Jun 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10W 20/069
Of conductive parts of the interconnections: by forming self-aligned vias or self-aligned contact plugs
H10B 12/0335
The capacitor extending over the transistor: making a connection between the transistor and the capacitor, e.g. plug
H10P 50/283
Of inorganic materials: by chemical means
H10W 20/063
Of conductive parts of the interconnections: by forming conductive members before forming protective insulating material

Method of manufacturing semiconductor device including steps of forming groove and recess, and semiconductor device

Life of this patent

Method of manufacturing semiconductor device including steps of forming groove and recess, and semiconductor device

Life of this patent

Abstract

Claims10