Thin film transistor and display device having the same
AssigneeFuji Xerox Co., Ltd.
InventorShigeru Yagi
Life of this patent
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Abstract
A thin film transistor has, on a transparent substrate, a transparent semiconductor layer containing nitrogen, hydrogen and one or more elements selected from Al, Ga and In, a transparent source electrode and a transparent drain electrode at least partially in contact with the transparent semiconductor layer, and a transparent gate electrode.
Claims9
A thin film transistor comprising, on a transparent substrate:
- a transparent semiconductor layer containing nitrogen, hydrogen and one or more elements selected from Al, Ga and In;
- a transparent source electrode and a transparent drain electrode at least partially in contact with the transparent semiconductor layer;
- and
- a transparent gate electrode.
A display device comprising a thin film transistor having, on a transparent substrate, a transparent semiconductor layer containing nitrogen, hydrogen and one or more elements selected from Al, Ga and In, a transparent source electrode and a transparent drain electrode at least partially in contact with the transparent semiconductor layer, and a transparent gate electrode.
Dependencies are inferred from the claim text.