H:SiOC coated substrates
AssigneeDow Corning Corporation
InventorsGlenn Allen Cerny, Byung Keun Hwang, Mark Jon Loboda
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Abstract
This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.
Claims12
A substrate selected from a liquid crystal device, a light emitting diode display device, and an organic light emitting diode display devices having thereon a film produced by:
- introducing a reactive gas mixture comprising a methyl-containing silane and an oxygen providing gas into a deposition chamber containing a substrate and inducing a reaction between the methyl-containing silane and oxygen providing gas at a temperature of 25° C. to 500° C.;
- wherein there is a controlled amount of oxygen present during the reaction to provide a film comprising hydrogen, silicon, carbon and oxygen having a dielectric constant of 3.6 or less on the substrate and to produce a film having a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm.
Dependencies are inferred from the claim text.