Electron beam exposure apparatus and exposing method using an electron beam

An electron beam exposure system exposing a pattern on a substrate, comprising:

• an electron source for generating an electron beam,
• an accelerating means for accelerating said electron beam,
• a first shaping aperture for shaping said electron beam,
• a shaping lens for projecting the electron beam that passes said first shaping aperture on a second shaping aperture,
• a shaping deflector for generating a shaped beam by deflecting the projection image from said first shaping aperture so as to shape a cross-section of the electron beam transmitting the second shaping aperture,
• a reducing lens for reducing said shaped beam generated with said shaping deflector,
• an objective lens for focusing said shaped beam image of the shaped beam reduced with said reducing lens on a sample surface,
• an objective deflector for deflecting said shaped beam to a desired location of said sample surface,
• a shaping axis adjusting deflector, which is arranged on an upper shaping lens and controls an incidence angle of said electron beam to said shaping deflector,
• an objective axis adjusting deflector, which is arranged between the second shaping aperture and the objective lens and controls said incidence angle of said shaped beam to said objective lens,
• a detector for detecting electrons which are generated by scanning said sample surface with the shaped beam with said objective axis adjusting deflector,
• a deflector output value adjusting means for adjusting said objective deflector, said shaping axis adjusting deflector and said objective axis adjusting deflector so as to obtain a minimum output value of deviation among output values from said objective deflector, said shaping axis adjusting deflector and said objective axis adjusting deflector, by scanning said sample surface with plural different shaped beams using the second shaping aperture, and
• a shaping lens adjusting means for setting an adjusting parameter of the shaping lens so as to make dispersion of the location difference minimum by changing a voltage applied by said accelerating means for accelerating said electron beam, under a condition which said deviation is adjusted to be said minimum output value by said deflector output value adjusting means, by measuring a location on said sample surface of said shaped beam based on information from said detector, by measuring said location difference of said shaped beam before and after said changing, and by obtaining said dispersion of said location difference in said output value of respective said deflectors corrected with said deflector output value adjusting means.

An electron beam exposure system exposing a pattern on a substrate, comprising:

• an electron source for generating an electron beam,
• a beam shaping means for generating an electron beam having an arbitrary cross-section by projecting said electron beam to several shaping apertures with a shaping lens,
• a detector for detecting a first electron which is generated by scanning a reference mark on a sample with a shaped beam generated by said beam shaping means,
• a focal location shift means for shifting a shaft of said shaped beam from a focal point of an objective lens on a reference location of said shaped beam which is determined based on a first location information of said shaped beam provided with said first detector, and
• a lens adjusting means for adjusting said shaping lens, wherein a second electron which is generated by scanning said reference mark on said sample with said shaped beam which is shifted an axis thereof with said focal location shift means is detected, a location differences of said shaped beam due to said shifting of said focal point of said objective lens are measured based on a second location information of said shaped beam provided with said detector, and an adjusting parameter for said lens is obtained in which dispersion of said location differences becomes minimum so as to adjust said shaping lens.