Method and apparatus for monitoring sputter etch process
OwnerChien-Chia Lin, Shih-Liang Chou +1inventors
InventorsChien-Chia Lin, Shih-Liang Chou, Kuo-Wei Shyu
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Abstract
An apparatus and a method for monitoring the ion concentration in an etching chamber of a sputter etch process are described, wherein the DC bias of a pre-clean process for a sputter etch process is acquired. The parameters of the pre-clean process for the sputter etch process are then adjusted according to the value of the monitored DC bias. The DC bias thus varies within a certain range to provide a steady control of the ion concentration and to reduce the defects formed in the wafer.
Claims14
A method for monitoring an ion concentration in an etching chamber during a sputter etch process, the process using a plasma and a DC bias to bombard a surface to be treated with ions, the method comprising:
- a step of sensing an amplitude of the DC bias during the sputter etch process and outputting a first signal indicating an amplitude of the DC bias.
An apparatus of sputter etch, which uses a plasma and a DC bias to bombard a surface to be treated in an etching chamber with ions, being characterized by:
- a DC bias monitoring device for sensing an amplitude of the DC bias and outputting a first signal indicating the amplitude during the process.
Dependencies are inferred from the claim text.