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AssigneeCity University of Hong Kong
InventorsShuit-Tong Lee, Igor Bello, Chun-Sing Lee, Quan Li, Naigui Shang
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A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal/metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide/silicon nanowires on tips of the silicon cones.
A method for the synthesis of large area uniform silicon cone arrays on a substrate by ion-beam sputtering, wherein total pressure is kept at 2×10−4Torr, silicon is used as a substrate, and a metal is used as a catalyst.
A method for the synthesis of large area uniform cone arrays made of a first material by ion-beam sputtering, wherein the first material is used as a substrate, and a second material is used as a catalyst, wherein the second material is a metal.
Apparatus for ion-beam sputtering of large area uniform silicon cones, comprising a high vacuum chamber suitable for ion-beam sputtering, an ion-source, means for holding a substrate in the chamber, means for arranging a metal catalyst around the substrate, means for adjusting the substrate temperature and means for adjusting the angles between the center ion-beam and the substrate surface normal.
A method for silicon cone surface modification by acid etching, wherein a hydrofluoric acid is used as an etchant, and de-ionized water is used as a stopper.
A method for silicon cone surface modification comprsing annealing under ultra-high vacuum conditions.
A method for silicon cone surface modification by low work function metal coating, wherein a low work function material is used as a coating material.
A method for growing silicon oxide nanowires on the tips of the silicon cones by heating, wherein the silicon cone is used as the substrate, metal/metal siliside cone tip is used as the catalyst, and inert gas is used as a protective gas.
A method for growing crystalline silicon nanowires on the tips of the silicon cones by heating, wherein the silicon cone is used as the substrate, metal/metal siliside cone tip is used as the catalyst, inert gas is used as a protective gas, and hydrogen is used as a reductive gas.
Apparatus for the high temperature growth of nanowires on tips of the silicon cones, comprising a vacuum chamber, means for holding a substrate in the chamber, means for supporting filaments in the chamber, and means for adjusting the substrate temperature.
Dependencies are inferred from the claim text.