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US 2003/0111012 A1Published application
Method for forming a thin film and a thin film forming apparatus therefor
AssigneeMurata Manufacturing Co., Ltd.
InventorYutaka Takeshima
Life of this patent
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Abstract
A method for forming a thin film comprises the steps of: forming a first thin film using a raw material which comprises an adduct of metal β-diketonate and adduct-forming material by a metal organic chemical vapor deposition (MOCVD) method; associating metal β-diketonate dissociated from the adduct in the raw material with an adduct-forming material to regenerate the raw material; and forming a second thin film using the regenerated raw material by the MOCVD method.
Claims20
A method for forming a thin film, comprising the steps of:
- forming a first thin film from a raw material which comprises an adduct of metal β-diketonate and adduct-forming material by a metal organic chemical vapor deposition (MOCVD) method;
- associating metal β-diketonate dissociated from the adduct in the raw material with an adduct-forming material to regenerate the raw material;
- and
- forming a second thin film using the regenerated raw material by the MOCVD method.
1 more element
A thin film forming apparatus comprising:
- a raw material container containing a supply of raw material comprising an adduct of metal β-diketonate and adduct-forming material;
- an adduct-forming material container containing a supply of adduct-forming material and which container is communicated with the raw material container such that a vapor of the adduct-forming material is capable of being supplied to the raw material container;
- and
- a MOCVD thin film deposition chamber communicated with the raw material container such that a vapor of raw material is capable of being supplied thereto from the raw material container.
1 more element
Dependencies are inferred from the claim text.