Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
AssigneeEmcore Corporation
InventorsVadim Boguslavskiy, Alexander Gurary
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AssigneeEmcore Corporation
InventorsVadim Boguslavskiy, Alexander Gurary
Estimating the term…
The invention describes a CVD reactor on solid substrates and a related method of deposition of epitaxial layers on the wafers. In the reactor of the invention, the wafer carrier is transported between a loading position and a deposition position. In the deposition position, the wafer carrier is detachably mounted on an upper end of a rotatable spindle without an intermediate susceptor. The reactor of the invention may process a single wafer or a plurality of wafers at the same time. The invention also described several embodiments and variants of the invention. One of the variants of the invention provides a decrease in a heat drain from the wafer-supporting assembly through the spindle and a novel heating arrangement therefore. The advantages of the invention include lower reactor cycle, the lower cost and longer lifetime of the component parts, and better temperature control, among others.
An apparatus for supporting and transporting at least one wafer in a CVD reactor having a rotatable spindle, said apparatus comprising:
A wafer carrier for supporting and transporting at least one wafer in a CVD reactor having a rotatable spindle, said wafer carrier comprising:
A wafer-supporting assembly of a CVD reactor comprising:
Dependencies are inferred from the claim text.