Method for producing a device for direct thermoelectric energy conversion

The process for producing a device for direct thermoelectric energy conversion, consisting of a p-type branch or thermoelement, an n-type branch or thermoelement, a hot junction and a cold junction, comprising the use of a composition of matter in the manufacture of the n-type branch and/or the p-type branch of the said device wherein said composition of matter comprises magnesium silicide, Mg2Si, wherein part of magnesium is replaced by barium and part of silicon is replaced by lead, wherein said composition of matter thus is an alloy or solid solution of intermetallic compounds containing magnesium silicide, magnesium plumbide, barium silicide and barium plumbide, wherein said composition of matter has the following constitutional formula:

• Ba2rMg2(1−r)Si1−xPbx,
• wherein r, (1−r), (1−x) and x represent the atomic proportion of each of barium, magnesium, silicon and lead in the alloy, respectively, and wherein said composition of matter optionally contains one or more additional doping materials.

The process for producing a device for direct thermoelectric energy conversion, consisting of a p-type branch or thermoelement, an n-type branch or thermoelement, a hot junction and a cold junction, comprising the use of a composition of matter in the manufacture of the n-type branch and/or the p-type branch of the said device, wherein said composition of matter comprises magnesium silicide, Mg2Si, wherein part of magnesium is replaced by barium and part of silicon is replaced by lead wherein said composition is an alloy or solid solution of intermetallic compounds containing magnesium silicide, magnesium plumbide, barium silicide and barium plumbide and wherein said composition of matter has the following constitutional formula:

• Ba2rMg2(1−r)Si1−xPbx
• wherein r, (1−r), (1−x) and x represent the atomic proportion of each of barium, magnesium, silicon and lead in the alloy, respectively.

The process for producing a device for direct thermoelectric energy conversion, consisting of a p-type branch or thermoelement, an n-type branch or thermoelement, a hot junction and a cold junction comprising the use of a composition of matter in the manufacture of the n-type branch and/or the p-type branch of the said device, wherein said composition of matter comprises magnesium silicide, Mg2Si, wherein part of magnesium is replaced by one or more elements selected from the group consisting of beryllium, calcium, strontium and barium, and wherein part of silicon is replaced by one or more elements selected from the group comprising germanium, tin, lead, antimony, bismuth, selenium and tellurium, wherein said composition of matter has the following constitutional formula:

• Be2uCa2vSr2wBa2zMg2(1−r)Si1−sGeaSnbPbcSbdBieSefTeg
• wherein r=u+v+w+z represents the sum of the atomic proportions of the elements that replace part of magnesium, wherein s=a+b+c+d+e+f+g represents the sum of the atomic proportions of the elements that replace part of silicon and wherein said composition of matter optionally contains one or more additional doping materials.

The process for producing a device for direct thermoelectric energy conversion, consisting of a p-type branch or thermoelement, an n-type branch or thermoelement, a hot junction and a cold junction, comprising the use of a composition of matter in the manufacture of the n-type branch and/or the p-type branch of the said device wherein said composition of matter comprises magnesium silicide, Mg2Si, wherein part of magnesium is replaced by one or more elements selected from the group consisting of beryllium, calcium, strontium and barium, and wherein part of silicon is replaced by one or more elements selected from the group comprising germanium, tin, lead, antimony, bismuth, selenium and tellurium, and wherein said composition of matter has the following constitutional formula:

• Be2uCa2vSr2wBa2zMg2(1−r)Si1−sGeaSnbPbcSbdBieSefTeg
• wherein r=u+v+w+z represents the sum of the atomic proportions of the elements that replace part of magnesium and wherein s=a+b+c+d+e+f+g represents the sum of the atomic proportions of the elements that replace part of silicon.