Structure provided with through hole, method of manufacture therefor, and liquid discharge head
AssigneeCanon Kabushiki Kaisha
InventorsYukihiro Hayakawa, Genzo Momma
Life of this patent
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Abstract
A structure having a base plate, such as silicon, provided with a through hole makes it possible to curtail the process numbers at the time of manufacture, while enhancing the reliability thereof. When the through hole is provided by anisotropic etching from the backside of the base plate, a silicon nitride film, which becomes membrane on the surface side of the base plate is formed so as not to allow etching solution from leaking to the surface side of the base plate. It is preferable to form the silicon nitride film using plasma CVD method to make the inner stress of the silicon nitride film a compression stress of 3×108 Pa or less.
Claims15
A structure comprising a semiconductor base plate, and a silicon oxide film and a silicon nitride film formed on a first main surface of said semiconductor base plate, being provided with a through hole penetrating said semiconductor base plate and said silicon nitride film, wherein
- said silicon oxide film is patterned to be arranged on said first main surface of said semiconductor base plate with the exception of the circumferential portion of said through hole, and
- said silicon nitride film is arranged to be in contact with said semiconductor base plate on the circumferential portion of said through hole on said first main surface of said semiconductor base plate, and
- the inner stress of said silicon nitride film is a compression stress of 3×108 Pa or less.
A method for manufacturing a structure having a semiconductor base plate, and a silicon oxide film and a silicon nitride film formed on a first main surface of said semiconductor base plate, being provided with a through hole penetrating said semiconductor base plate and said silicon nitride film, comprising the following steps of:
- forming a sacrificing layer on the first main surface of said semiconductor base plate corresponding to the position of said through hole formation;
- forming a silicon oxide film to cover the entire surface of said sacrificing layer and said first main surface;
- patterning the silicon oxide film to enable said first main surface to be exposed on the circumference of said sacrificing layer;
- forming a silicon nitride film to cover said silicon oxide film and said sacrificing layer with the inner stress thereof being a compression stress of 3×108 Pa or less;
- and
- etching said semiconductor base plate from a second main surface side of said semiconductor base plate to remove said sacrificing layer, and forming a through hole by etching said silicon nitride film.
A liquid discharge head comprising:
- a base plate having a semiconductor base plate, and a silicon oxide film and a silicon nitride film formed on a first main surface of said semiconductor base plate, a heat generating resistive member put between said silicon oxide film and said silicon nitride film, being provided with a supply port penetrating said semiconductor base plate and said silicon nitride film for supplying liquid;
- and
- a discharge port arranged to face said heat generating resistive member, wherein
- said silicon oxide film is pattered to be arranged for said first surface of said semiconductor base plate with the exception of the circumferential portion of said supply port,
- said silicon nitride film is arranged to be in contact with said semiconductor base plate on the circumferential portion of said supply port on said first main surface of said semiconductor base plate, and
- the inner stress of said silicon nitride film is a compression stress of 3×108 Pa or less.
Dependencies are inferred from the claim text.