Semiconductor device
AssigneeMitsubishi Denki Kabushiki
InventorsJunko Izumitani, Hiroki Takewaka
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Abstract
A semiconductor device and its manufacturing method are obtained in which, in a semiconductor device having a multilayer interconnection structure using copper interconnections, a bonding wire can be bonded to a bonding pad with enhanced connecting reliability and stability. Third-layer interconnections (17) and a bonding pad (71), both made of an aluminum alloy, are formed partially on a second interlayer insulating film (14). An opening (74) whose bottom is defined by the bonding pad (71) is partially formed in a third interlayer insulating film (63), a fourth interlayer insulating film (67), a protective insulating film (72), and a buffer coat film (73). A bonding wire (75) is inserted in the opening (74) and bonded to the bonding pad (71).
Claims8
A semiconductor device comprising a multilayer interconnection structure in which a plurality of interconnection layers are formed in an insulating film,
- said multilayer interconnection structure having,
- a first metal film made of a first material and functioning as a first interconnection belonging to an interconnection layer other than an uppermost interconnection layer,
- a second metal film made of a second material and functioning as a second interconnection belonging to the uppermost interconnection layer, said second material having a lower resistance and being more susceptible to oxidation than said first material, and
- a third metal film made of said first material, belonging to an interconnection layer other than the uppermost interconnection layer, and functioning as a bonding pad,
- said semiconductor device further comprising,
- an opening formed in said insulating film and having its bottom defined by said third metal film, and
- a bonding wire connected to said third metal film through said opening.
A semiconductor device comprising a multilayer interconnection structure in which a plurality of interconnection layers are formed in an insulating film,
- said multilayer interconnection structure having,
- a first metal film made of a first material and functioning as a first interconnection belonging to an interconnection layer other than an uppermost interconnection layer,
- a second metal film made of a second material and functioning as a second interconnection belonging to the uppermost interconnection layer, said second material having a lower resistance and a lower thermal conductivity than said first material, and
- a third metal film made of said first material, belonging to an interconnection layer other than the uppermost interconnection layer, and functioning as a fuse of a redundancy circuit, and
- said semiconductor device further comprising an opening formed in said insulating film and having its bottom defined above said third metal film.
Dependencies are inferred from the claim text.