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US 2003/0080378 A1Published application
Semiconductor component, trench structure transistor, trench MOSFET, IGBT, and field-plate transistor
AssigneeInfineon Technologies AG
InventorsMarkus Zundel, Franz Hirler
Life of this patent
Estimating the term…
Abstract
A semiconductor component has a minimal size and area requirement. The semiconductor component is formed in a trench with wall regions and a bottom region. Terminal regions for the electrical connection of first and second contact regions (S, B) are formed at least partly within the trench (30).
Claims58
A semiconductor component, comprising:
- a semiconductor substrate region having a trench with a width, wall regions, and a bottom region formed therein, said wall regions including an upper trench section;
- a contact region formed outside and directly proximate said trench in a region of said upper trench section;
- a terminal region for electrical connection of said contact region and formed at least partly within said trench;
- and
- a trench side region being narrower than said width of said trench.
2 more elements
A trench structure transistor, comprising:
- a semiconductor substrate region having a trench with a width, wall regions, and a bottom region formed therein, said wall regions including an upper trench section;
- a contact region formed outside and directly proximate said trench in a region of said upper trench section;
- a terminal region for electrical connection of said contact region and formed at least partly within said trench;
- and
- a trench side region being narrower than said width of said trench.
2 more elements
A trench MOSFET, comprising:
- a semiconductor substrate region having a trench with a width, wall regions, and a bottom region formed therein, said wall regions including an upper trench section;
- a contact region formed outside and directly proximate said trench in a region of said upper trench section;
- a terminal region for electrical connection of said contact region and formed at least partly within said trench;
- and
- a trench side region being narrower than said width of said trench.
2 more elements
An IGBT, comprising:
- a semiconductor substrate region having a trench with a width, wall regions, and a bottom region formed therein, said wall regions including an upper trench section;
- a contact region formed outside and directly proximate said trench in a region of said upper trench section;
- a terminal region for electrical connection of said contact region and formed at least partly within said trench;
- and
- a trench side region being narrower than said width of said trench.
2 more elements
A field plate transistor, comprising:
- a semiconductor substrate region having a trench with a width, wall regions, and a bottom region formed therein, said wall regions including an upper trench section;
- a contact region formed outside and directly proximate said trench in a region of said upper trench section;
- a terminal region for electrical connection of said contact region and formed at least partly within said trench;
- and
- a trench side region being narrower than said width of said trench;
- a second-further contact region is formed within said trench;
- and
- a third-further contact region formed outside said trench directly proximate said trench in said region of said lower trench section.
5 more elements
Dependencies are inferred from the claim text.