Back to results
US 2003/0080338 A1Published application
Light emitting device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Toshimitsu Konuma, Hiroko Yamazaki
Life of this patent
Estimating the term…
Abstract
In an active matrix type light emitting device, an upper surface injection type light emitting device in which an anode formed on the upper portion of the organic compound layer becomes an electrode for taking out the light is provided. In a light emitting element consisting of an cathode, an organic compound layer and an anode, it is characterized in that a protector is formed on the interface between the anode being an electrode for taking out the light and the organic compound layer. Noted that the protector formed on the organic compound layer has a transmittance of 70-100%, and the damage given to the organic compound layer when the anode is formed by a sputtering method can be prevented.
Claims27
A light emitting device, comprising:
- a TFT provided over an insulation surface,
- an interlayer insulating film formed over said TFT,
- a pixel electrode formed over said interlayer insulating film,
- an insulating film covering edge portions of said pixel electrode,
- a cathode formed over said pixel electrode,
- a layer comprising an organic compound formed over said cathode,
- a protector formed over said layer comprising an organic compound, and
- an anode formed over said protector, and
- wherein said TFT comprises a source region and a drain region, said pixel electrode is electrically connected to either of said source region or said drain region at an opening formed in said interlayer insulating film, and
- said protector consists of a material whose work function is in the range from 4.5 to 5.5 eV.
7 more elements
A light emitting device, comprising;
- a TFT provided over an insulation surface,
- an interlayer insulating film formed over said TFT,
- a pixel electrode formed over said interlayer insulating film,
- an insulating film covering edge portions of said pixel electrode,
- a cathode formed over said pixel electrode,
- a layer comprising an organic compound formed over said cathode,
- a protector formed over said layer comprising an organic compound, and
- an anode formed over said protector, and
- wherein said TFT comprises a source region and a drain region,
- said pixel electrode is electrically connected to either of said source or said drain region at an opening formed in said interlayer insulating film, and
- said protector has an average film thickness of 0.5-5 nm.
8 more elements
A light emitting device, comprising:
- a TFT provided over an insulation surface,
- an interlayer insulating film formed over said TFT,
- a barrier film formed over said interlayer insulating film,
- a pixel electrode formed over said barrier film,
- an insulating film covering edge portions of said pixel electrode,
- a cathode formed over said pixel electrode,
- a layer comprising an organic compound formed over said cathode,
- a protector formed over said layer comprising an organic compound, and
- an anode formed over said protector, and
- wherein said TFT comprises a source region and a drain region,
- said pixel electrode is electrically connected to either of said source region or said drain region via an opening formed in said interlayer insulating film and said barrier film,
- said cathode comprises a material containing a metal belonging to 1 group or 2 group of the periodic table, and
- said protector comprises a material whose work function is in the range from 4.5 to 5.5 eV.
10 more elements
A light emitting device, comprising:
- a TFT provided over an insulation surface,
- an interlayer insulating film formed over said TFT,
- a barrier film formed over said interlayer insulating film,
- a pixel electrode formed over said barrier film,
- an insulating film covering edge portions of said pixel electrode,
- a cathode formed over said pixel electrode,
- a layer comprising an organic compound formed over said cathode,
- a protector formed over said layer comprising an organic compound, and
- an anode formed over said protector, and
- wherein said TFT comprises a source region and a drain region,
- said pixel electrode is electrically connected to either of said source region or said drain region via an opening formed in said interlayer insulating film and said barrier film,
- said cathode comprises a material containing a metal belonging to 1 group or 2 group of the periodic table, and
- said protector has an average film thickness of 0.5-5 nm.
10 more elements
A light emitting device, comprising:
- a TFT provided over an insulation surface,
- an interlayer insulating film formed over said TFT,
- a pixel electrode formed over said interlayer insulating film,
- an insulating film covering edge portions of said pixel electrode,
- a cathode formed over said pixel electrode,
- a layer comprising an organic compound formed over said cathode,
- a protector formed over said layer comprising an organic compound, and
- an anode formed over said protector, and
- wherein said TFT comprises a source region and a drain region,
- said pixel electrode is electrically connected to either of said source region or said drain region at an opening formed in said interlayer insulating film,
- said layer comprising an organic compound comprises a first layer comprising an organic compound and a second layer comprising an organic compound different from a substance constituting said first layer, and
- said light emitting device further comprises a mixed layer containing both of an organic compound constituting said first layer and an organic compound constituting said second layer between said first layer and said second layer.
9 more elements
Dependencies are inferred from the claim text.