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AssigneeSeiko Epson Corporation
InventorsIchio Yudasaka, Mitsutoshi Miyasaka, Piero Migliorato
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The present invention provides a thin film transistor (TFT) and its production method which enable the stabilizing of saturation current and improving reliability by improving the film quality of the channel region. The TFT includes a channel region towering over a gate electrode through a gate insulation film, a source region connecting to the channel region and a drain region connecting to the channel region on an opposite side of the source region are formed on the polycrystal semiconductor film on which island-like patterning is performed. An indented section is formed on a surface of the channel region, and the section corresponding to the indented section becomes a recombination center which captures the small-number carrier (holes) because the degree of the crystallization is low in the section corresponding to the indented section due to shift from the optimum conditions at the time of laser annealing of the semiconductor.
A thin film transistor, of the type wherein channel regions which tower through the gate insulation film in the gate electrode and source drain regions connected to said channel regions are formed against a semiconductor film being formed on the surface of an insulation substrate, wherein recombination centers which capture carriers are formed in said channel regions by part of crystal semiconductor films with a relatively low degree of crystallization among crystal semiconductor films forming said channel regions.
A method for manufacturing a thin film transistor, wherein channel regions which tower through the gate insulation film in the gate electrode and source drain regions connected to said channel regions are formed against a semiconductor film being formed on the surface of an insulation substrate, wherein a section with a relatively low degree of crystallization is formed within a predetermined region of said semiconductor films by applying laser annealing for said semiconductor films after forming the semiconductor films for forming said channel regions.
Dependencies are inferred from the claim text.