System and method for characterization of thin films
AssigneePhysical Electronics, Inc.
InventorsPaul E. Larson, John F. Moulder, David G. Watson, David S. Perloff
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AssigneePhysical Electronics, Inc.
InventorsPaul E. Larson, John F. Moulder, David G. Watson, David S. Perloff
Estimating the term…
Characterization of a sample, e.g., determination of a component's concentration in a thin film, may be attained by providing calibration information representative of surface spectrum measurements for a plurality of samples correlated with depth profile information for the plurality of samples. The plurality of samples are formed under a same set of process conditions. One or more surface spectrum measurements are provided for a sample to be characterized that also was formed under the same set of process conditions. At least one characteristic of the sample to be characterized (e.g., concentration of a component) is determined based on the one or more surface spectrum measurements for the sample to be characterized and the calibration information.
A method for use in characterizing a sample, the method comprising:
The method of claim 10, wherein using the ion beam comprises providing the ion beam at an ion angle less than or equal to about 20 degrees relative to the sample surface.
A method for use in characterizing a sample comprising a thin film, the method comprising:
A system for use in characterizing a sample, wherein the system comprises:
Dependencies are inferred from the claim text.